2017
DOI: 10.1109/tcpmt.2016.2642901
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Mitigating Crosstalk in Unterminated Channels

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Cited by 2 publications
(2 citation statements)
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“…At the process level, the studies presented in [10,11] used more advanced throughhole fabrication processes to obtain vias with smaller diameter and reduce the spacing between vias, and Jangam and Iyer (2021) [12] used a novel silicon interconnect structure (SI-IF) instead of conventional printed circuit boards, which has the advantages of fine pitch, scalability, and heterogeneous integration. At the circuit level, Shi et al (2019) [13] proposed a compensation structure based on a third-order Butterworth low-pass filter to increase the bandwidth of the interconnect circuit; Braunisch et al (2017) [14] introduced a method to improve crosstalk noise on short channels using drivers, although it requires additional wiring; and Madhuri and Sunithamani (2019) [15] proposed a faster and less error-prone analytical model for interconnect structures. The authors of [16][17][18][19] discussed the crosstalk characteristics of CMOS gate-driven interconnect structures and the effect of simultaneous switching on crosstalk.…”
Section: Introductionmentioning
confidence: 99%
“…At the process level, the studies presented in [10,11] used more advanced throughhole fabrication processes to obtain vias with smaller diameter and reduce the spacing between vias, and Jangam and Iyer (2021) [12] used a novel silicon interconnect structure (SI-IF) instead of conventional printed circuit boards, which has the advantages of fine pitch, scalability, and heterogeneous integration. At the circuit level, Shi et al (2019) [13] proposed a compensation structure based on a third-order Butterworth low-pass filter to increase the bandwidth of the interconnect circuit; Braunisch et al (2017) [14] introduced a method to improve crosstalk noise on short channels using drivers, although it requires additional wiring; and Madhuri and Sunithamani (2019) [15] proposed a faster and less error-prone analytical model for interconnect structures. The authors of [16][17][18][19] discussed the crosstalk characteristics of CMOS gate-driven interconnect structures and the effect of simultaneous switching on crosstalk.…”
Section: Introductionmentioning
confidence: 99%
“…In many applications, the receiver ends of the lines are left un-terminated to conserve power. Braunisch et al [15] showed how theoretical crosstalkfree signalling on short un-terminated channels can be achieved. The near-end crosstalk propagating to the far end is the primary source of crosstalk noise in short un-terminated channels.…”
Section: Introductionmentioning
confidence: 99%