Silver antimony sulfide, as a ternary chalcogenide, has
attracted
great attention in the field of optoelectronics in recent years. In
particular, it has appealing properties, such as excellent stability,
solution processability, and versatile composition tunability. Benefiting
from the recent development of processing techniques, AgSbS2 has emerged as a promising candidate for next-generation, thin-film
photovoltaics. On the contrary, AgSbS2-based photodetectors
have been barely reported. In this work, we systematically investigated
the composition engineering of silver antimony sulfide compounds with
a precursor route. Their optoelectronic properties were fully characterized,
and the composition was optimized for photodetection. High-performance
phototransistors were first reported based on field-effect thin film
transistors with interfacial modification. The obtained AgSbS2 phototransistors exhibited relatively high photosensitivity,
low dark current and noise, superior device stability, and excellent
detectivity covering the whole range from ultraviolet to near-infrared,
highlighting the great potential for next-generation photodetection.