Mixed alkyl zinc or cadmium complexes with dialkyl thio‐ or selenocarbamates: Precursors for cadmium chalcogenides

Abstract

A series of new compounds [RME2CNR′2]2 (R and R′ are various alkyl groups, e.g. M  Zn or Cd, R  Me, R′  Et) have been synthesised and characterised. The compounds can be used as single molecular precursors for the deposition of the corresponding binary chalcogenides. In the present paper the range of compounds synthesised and their uses are reviewed. Preliminary observations on the deposition of thin films on glass and GaAs(100) substrates are reported.

Deposition of II‐VI Thin Films by LP‐MOCVD Using Novel Single‐Source Precursors

“…[21] A graphite susceptor holds the substrate dimensions (10 mm ϫ 15 mm) which was heated by a tungsten halogen lamp.…”

Morphology and band gap controlled AACVD of CdSe and CdS Se1− thin films using novel single source precursors: Bis(diethyldithio/diselenocarbamato)cadmium(II)

“…2(a) shows the powder X-ray diffraction (p-XRD) diffraction patterns of CdSe films obtained at 300°C using 7 mmol concentration of the precursor. Reflections corresponding to the (hkl) planes were observed at 2θ: 23 Fig. 2(b) shows the p-XRD pattern of the films deposited at 300°C using an increased concentration (14 mmol) of the precursor.…”

“…A series of metal complexes with the general formula [M(R 2 PSe 2 ) n ] (M ¼Zn, Cd, Pb, In, Ga, Cu, Bi, Ni; R ¼ i Pr, Ph) have been synthesised and used for the growth of metal selenide thin films by CVD [15,16]. Other metal complexes with the general formula [(M(E 2 CNR 2 ) 2 ] (symmetrical) or [M(E 2 CNRR′) 2 ] (unsymmetrical) (R, R′¼ alkyl, E ¼S, Se; M ¼Zn, Cd) are precursors that have been used for the deposition of II-VI thin films [17][18][19][20][21][22][23][24][25][26][27]. Bis(n-hexy (methyl)dithio/selenocarbamato)cadmium/zinc proved to be the best of the unsymmetrical derivatives for the growth of chalogenides [18][19][20][21][22] caused by undesirable ligand degradation reactions.…”

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

“…[83] In a comparative study, [(Me)Zn(S 2 CNEt 2 )] 2 , [(Me)Cd (Se 2 CNEt 2 )] 2 , [(Me 3 CCH 2 )Cd(S 2 CNEt 2 )] 2 , and [(Me)Cd (Se 2 CNEt 2 )] 2 were also used to deposit films of the respective metal chalcogenides on both glass and (100)-GaAs, using a cold-wall reactor under vacuum (10 ±2 torr). [86] Sublimation temperatures ranged from 145 C to 165 C, depending on the molecule. The films of CdS grown at 425 C from [(Me)Cd(S 2 CNEt 2 )] 2 were of better quality than those from [(Me 3 CCH 2 )Cd(S 2 CNEt 2 )] 2 .…”