Mixed Self‐Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

Zschieschang, Ute; Ante, Frederik; Schlörholz, Matthias; Schmidt, Maike Christiane; Kern, Klaus; Klauk, Hagen

doi:10.1002/adma.201001502

Cited by 178 publications

(172 citation statements)

References 22 publications

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“…The hydrophobicity of the C 8 PA surface is improved when the desorption time is increased from 25 to 210 minutes, leading to a water contact angle of 107.4  0.5 for the latter. This value is similar to the value reported for C 18 PA monolayers assembled from solutions [36]. The reduction in the leakage current density, increase in the breakdown electric field and improvement in the surface roughness confirm that dry C 8 PA monolayer provides good step coverage and offers an alternative path to alkyl phosphonic acid monolayers prepared from solution.…”

Section: Properties Of the Gate Dielectricsupporting

confidence: 87%

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Gupta¹,

Glesková²

2013

Organic Electronics

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Section: Properties Of the Gate Dielectricsupporting

confidence: 87%

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Gupta¹,

Glesková²

2013

Organic Electronics

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“…A CMOS inverter with an optimum trip voltage and noise margin (72%) was fabricated on a flexible substrate, the highest noise margin for a CMOS circuit based on a single flexible semiconductor material achieved to date. The highest previously reported noise margin organic CMOS inverter was 80% on a rigid substrate, using both p-type (pentacene) and n-type (F 16 CuPc) semiconductors (18). However, the channel width of one of the transistors had to be 10 times larger than the other, which increases the size of the whole circuit.…”

Section: Discussionmentioning

confidence: 99%

“…This is because transistor threshold voltage determines the input voltage at which a circuit switches between two logic states (trip voltage of an inverter). When the trip voltage is half of the supply voltage, the circuit has the largest noise margin, which is a quantitative measure of the immunity of a logic circuit against noise and a figure of merit to characterize the robustness of the circuit (17,18). If threshold voltage cannot be controlled during the fabrication process, the resulting circuit might not work reliably due to the electrical noise that is always present in the system.…”

mentioning

confidence: 99%

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Wang

Wei

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

192

174

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Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at V DD = 80 V (70% of 1/2V DD ) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2V DD ) and logic gates with rail-torail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. nanomaterials | n-doping | inkjet-printed | CMOS circuit F lexible electronics have attracted increasing attention recently due to the plethora of possible and realized applications in radio-frequency identification cards (1, 2), flexible displays (3, 4), and digital processors (5). Solution-processed single-walled carbon nanotubes (SWNTs) are a promising candidate for flexible circuits due to their high charge carrier mobility (6), excellent flexibility/stretchability (7-9), and their compatibility with lowcost, large-area manufacturing processes, such as printing (1, 10) of SWNTs. Their applications in thin-film transistors (TFTs) and integrated logic circuits (11-14) have been demonstrated. However, to achieve robust digital circuits with high immunity against the influence of electronic noise in the system, it is important to be able to control the specific value of the threshold voltage of a transistor during the fabrication process (15,16). This is because transistor threshold voltage determines the input voltage at which a circuit switches between two logic states (trip voltage of an inverter). When the trip voltage is half of the supply voltage, the circuit has the largest noise margin, which is a quantitative measure of the immunity of a logic circuit against noise and a figure of merit to characterize the robustness of the circuit (17, 18). If threshold voltage cannot be controlled during the fabrication process, the resulting circuit might not work reliably due to the electrical noise that is always present in the system. Because SWNTs have ambipolar electrical transport properties (19), accurately tuning the threshold voltage permits the construction of complementary metal−oxide−semiconductor (CMOS) circuits that use both the p-type and n-type character of SWNTs. The advantages of CMOS circuits compared with unipolar ...

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“…Such devices present an ideal system to characterize these 2D films, as they contain only a single, chemically bound layer of semiconductor. The expected improvement of the electronic properties in mixed SAMs was only validated for short alkyl-PAs up to chain length of C 10 . Longer alkyl-PAs in the mixed SAMs led to a decrease in performance, which can be explained by closely analysing the results of the XRR measurements.…”

Section: Discussionmentioning

confidence: 99%

Tuning the molecular order of C₆₀-based self-assembled monolayers in field-effect transistors

Schmaltz¹,

Khassanov²,

Steinrück

et al. 2014

Nanoscale

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The control of order in organic semiconductor systems is crucial to achieve desired properties in electronic devices. We have studied the order in fullerene functionalized self-assembled monolayers by mixing the active molecules with supporting alkyl phosphonic acids of different chain length. By adjusting the length of the molecules, structural modifications of the alignment of the C 60 head groups within the SAM can be tuned in a controlled way. These changes on the sub-nanometre scale were analysed by grazing incidence X-ray diffraction and X-ray reflectivity. To study the electron transport properties across these layers, self-assembled monolayer field-effect transistors (SAMFETs) were fabricated containing only the single fullerene monolayer as semiconductor. Electrical measurements revealed that a high 2D crystalline order is not the only important aspect. If the fullerene head groups are too confined by the supporting alkyl phosphonic acid molecules, defects in the crystalline C 60 film, such as grain boundaries, start to strongly limit the charge transport properties. By close interpretation of the results of structural investigations and correlating them to the results of electrical characterization, an optimum chain length of the supporting alkyl phosphonic acids in the range of C 10 was determined. With this study we show that minor changes in the order on the sub-nanometre scale, can strongly influence electronic properties of functional self-assembled monolayers.

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Mixed Self‐Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

Cited by 178 publications

References 22 publications

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Tuning the molecular order of C₆₀-based self-assembled monolayers in field-effect transistors

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Mixed Self‐Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

Cited by 178 publications

References 22 publications

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors

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Product

Resources

About

Tuning the molecular order of C₆₀-based self-assembled monolayers in field-effect transistors