“…AWO 4 compounds have good dielectric properties: permittivity is 8-17, Q f value is 32,000-69,000 GHz, and f value is −53 to −78 ppm/ • C [5]. AMoO 4 compounds are also suitable for applications of microwave dielectric materials, with low permittivity (7)(8)(9)(10)(11), low dielectric loss (37,000-90,000 GHz) and relatively small temperature coefficient of resonant frequency (−57 to −87 ppm/ • C) [6] other systems [14][15][16][17]. In the recent investigation, ZnMoO 4 sintered at 800 • C presents excellent microwave dielectric properties with ε r = 8.67 (permittivity), Q f = 49,900 GHz, f = −87.49 ppm/ • C [6].…”