<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NH</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn><mml:mo>:</mml:mo></mml:math>Dissociation and su

Björkqvist, M; Göthelid, Mats; Grehk, T. M.; Karlsson, U.O.

doi:10.1103/physrevb.57.2327

Cited by 33 publications

(22 citation statements)

References 40 publications

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“…Previous studies of ammonia interacting with the Si(111)-(7 × 7) surface have shown that dissociation is again facile and have proposed that the adatoms act as electrophilic reactive sites. 35,59 While there are 12 electrophilic adatoms in each unit cell, our measurements of the total TMA coverage indicate that at saturation coverage only ∼6 TMA molecules are able to bond in each unit cell. While this limit could arise from steric constraints, it may also be due to charge transfer between adatoms that may limit the total density of dative-bonded adducts.…”

Section: A Experimental Bonding Configurationsmentioning

confidence: 98%

Silicon Surfaces as Electron Acceptors: Dative Bonding of Amines with Si(001) and Si(111) Surfaces

2001

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The bonding of the trimethylamine (TMA) and dimethylamine (DMA) with crystalline silicon surfaces has been investigated using X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, and density-functional computational methods. XPS spectra show that TMA forms stable dative-bonded adducts on both Si(001) and Si(111) surfaces that are characterized by very high N(1s) binding energies of 402.2 eV on Si(001) and 402.4 eV on Si(111). The highly ionic nature of these adducts is further evidenced by comparison with other charge-transfer complexes and through computational chemistry studies. The ability to form these highly ionic charge-transfer complexes between TMA and silicon surfaces stems from the ability to delocalize the donated electron density between different types of chemically distinct atoms within the surface unit cells. Corresponding studies of DMA on Si(001) show only dissociative adsorption via cleavage of the N-H bond. These results show that the unique geometric structures present on silicon surfaces permit silicon atoms to act as excellent electron acceptors.

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Section: A Experimental Bonding Configurationsmentioning

confidence: 98%

Silicon Surfaces as Electron Acceptors: Dative Bonding of Amines with Si(001) and Si(111) Surfaces

2001

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“…A relatively recent PhD structural study of the Si(111)/NH 3 adsorption system [85], performed at room temperature, was undertaken with the objective of identifying the preferred adsorption sites of the NH x species. The spectral resolution of this investigation was inadequate to formally distinguish the possible presence of both NH 2 and NH species on the surface (which do lead to slightly different N 1s photoelectron binding energies [84]). The key conclusion was that the NH x species, believed to be entirely or predominantly NH 2 , are adsorbed atop the Si rest atoms (with a Si-N bondlength of 1.71±0.02 Å), with no more than a small minority adsorbed atop the Si adatoms.…”

Section: Nitrogen-containing Speciesmentioning

confidence: 99%

The local structure of molecular reaction intermediates at surfaces

Woodruff

2008

Chem. Soc. Rev.

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A review is presented of the results of (experimental) quantitative structural studies of molecular reaction intermediates at surfaces; i.e. molecular species that do not exist naturally in the gas phase and, in most cases, are implicated in surface catalytic processes. A brief review of the main experimental methods that have contributed to this area is followed by a summary of the main results. Investigated species include:carboxylates, RCOO-(particularly formate, but also deprotonated amino acids); methoxy, CH 3 O-, carbonate, CO 3 ; ethylidyne, CH 3 C-; NH x and SO x species; cyanide, CN. As far as possible in the limited range of system studied, a few general trends are identified.2

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“…The peaks are attributed to newly adsorbed species resulting from the dissociative chemisorption of NH 3 molecules. In this way, drawing upon an analogy with the Si(111) and Si(100) surfaces, 10,11,14 three species can possibly form: Si-NH 2 , Si 2 = =NH, and Si 3 ≡≡N. This notation describes the neighboring atoms bound to a central atom (i.e., N) with covalent bonds.…”

Section: Resultsmentioning

confidence: 99%

“…Since H is more electronegative than Si, substituting a N-H bond with a N-Si bond will decrease the core-level binding energy. 10 This ranks the species in the following order from the highest to lowest in core-level binding energy: Si-NH 2 , Si 2 = =NH, and Si 3 ≡≡N.…”

Section: Resultsmentioning

confidence: 99%

“…1(b), spectrum 2) are lower compared to those on the surface of bulk Si substrates. 10,11,14 Since the silicene layer is structurally and electronically very different, this can be expected to result in a different range for the binding energies of the NH x species. In addition, the ZrB 2 substrate is metallic and is expected to have a different final state effect on the N 1s core-level due to its higher polarizability compared to a semiconducting Si substrate.…”

Section: Resultsmentioning

confidence: 99%

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A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Wiggers

Bui

Friedlein

et al. 2016

The Journal of Chemical Physics

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We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB 2 (0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH 3 molecules with the silicene-terminated ZrB 2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH 3 at 400• C leads to surface nitridation, and subsequent annealing up to 830• C results in a solid phase reaction with the ZrB 2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation. C 2016 AIP Publishing LLC. [http://dx

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NH3onSi(111)7×7:Dissociation and su

Cited by 33 publications

References 40 publications

Silicon Surfaces as Electron Acceptors: Dative Bonding of Amines with Si(001) and Si(111) Surfaces

Silicon Surfaces as Electron Acceptors: Dative Bonding of Amines with Si(001) and Si(111) Surfaces

The local structure of molecular reaction intermediates at surfaces

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

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