InAs͑001͒-c͑8ϫ2͒, InSb͑001͒-c͑8ϫ2͒, and several reconstructions of GaAs͑001͒ are exposed at room temperature to iodine molecules ͑I 2 ͒. Low-energy electron diffraction ͑LEED͒ and synchrotron soft x-ray photoelectron spectroscopy ͑SXPS͒ are employed to study the surfaces as a function of I 2 dose and sample anneal. In the exposure range studied, GaAs and InAs become saturated with I 2 , resulting in removal of the clean surface reconstruction and the formation of a very strong 1ϫ1 LEED pattern. Iodine bonds primarily to the dominant elemental species present on the clean surface, whether it is a group-III or-V element. The InSb͑001͒-c͑8ϫ2͒ reconstruction is also removed by I 2 adsorption, and a strong 1ϫ1 LEED pattern is formed. SXPS data, in conjunction with scanning tunneling microscopy images, however, reveal that InSb͑001͒-c͑8 ϫ2͒ does not saturate at room temperature, but is instead etched with a preferential loss of In. Heating the iodine-covered group-III-rich InAs͑001͒-c͑8ϫ2͒ and InSb͑001͒-c͑8ϫ2͒ surfaces causes removal of the iodine overlayer and transformation to a group-V-rich reconstruction. When the iodine-covered As-rich GaAs͑001͒-c͑2ϫ8͒ surface is heated to remove iodine, however, the c͑2ϫ8͒ reconstruction is simply regenerated. ͓S0163-1829͑96͒12427-9͔

No abstract

No abstract

No abstract

No abstract