Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn (√3×√3)<i>R</i>30° reconstructions

Göthelid, Mats; Björkqvist, M; Grehk, T. M.; Lay, G. Le; Karlsson, Ulf O.

doi:10.1103/physrevb.52.r14352

Cited by 47 publications

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“…40 for the valence band and Ref. 41 for the core levels of similar ͱ3 structures, i.e., as a consequence of the existence of two kinds of Pb atoms, whose vibrational movement is stabilized at LT. The broader structure found at RT would reflect the envelope between the different contributions coming from the vibrational movement of Pb atoms, which would be frozen at LT.…”

Section: ؋3 Phase: Results and Discussionmentioning

confidence: 99%

Fermi surface and electronic structure of Pb/Ge(111)

et al. 1998

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The electronic structure of Pb/Ge͑111͒ has been probed along the temperature-induced phase transition ␣ Ϫͱ3ϫͱ3R30°⇒3ϫ3 using angle-resolved photoemission. The ␣Ϫͱ3ϫͱ3R30°phase is metallic due to the existence of a half-filled, dispersing surface band. The 3ϫ3 phase is characterized by the appearance of an additional surface band with 3ϫ3 periodicity, whose role in the phase transition is discussed. The Fermisurface topology of the ␣Ϫͱ3ϫͱ3R30°phase has been probed using angle-resolved photoemission. Its shape is undulated, and it resembles strongly the theoretical prediction, with a Fermi momentum of 0.31 Å Ϫ1 along ⌫K directions and 0.40 Å Ϫ1 along ⌫M directions. These values were determined from different experimental methods, and agree with the values needed for a perfect 3ϫ3 nesting. However, the Fermi surface exhibits no large flat areas suitable for electronic nesting.

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Section: ؋3 Phase: Results and Discussionmentioning

confidence: 99%

Fermi surface and electronic structure of Pb/Ge(111)

et al. 1998

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“…These spectra are similar to spectra in the literature. 8 From the line shape it is quite clear that the Sn 4d spectra consist of at least two components, which is in contrast to the single component expected for a simple )ϫ) surface.…”

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confidence: 88%

“…[5][6][7] The smaller component C 1 is located to the right of the larger component C 2 , which is the opposite of the Sn/Ge͑111͒ case. 8 At room temperature the Sn 4d core-level spectra look very similar except for a general broadening ͑see Fig. 1͒ and they decompose into the same three components.…”

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confidence: 91%

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Electronic structure ofSn/Si(111)3
Uhrberg
¹
,
Zhang
²
,
Balasubramanian
³

et al. 2000
Phys. Rev. B
56
12
43
0
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The Sn/Si͑111͒ )ϫ) surface has been studied by photoelectron spectroscopy, low-energy electron diffraction ͑LEED͒, and scanning tunneling microscopy. Unlike Sn/Ge͑111͒, the Sn/Si͑111͒ surface shows a )ϫ) LEED pattern at low temperature also ͑70 K͒. The electronic structure, however, is inconsistent with a pure )ϫ) phase. Sn 4d spectra exhibit two major components and the valence band shows two surface bands. These features have been associated with the low-temperature 3ϫ3 phase in the case of Sn/Ge͑111͒. The similarity in the electronic structure points to stabilization of a low-temperature phase for Sn/Si͑111͒ also, but at a significantly lower temperature ͑Ͻ70 K͒.Phase transitions in low-dimensional systems have recently attracted a lot of experimental and theoretical interest. A striking example is the transition that occurs on the 1 Pb/ Ge͑111͒ and 2 Sn/Ge͑111͒ surfaces. The room-temperature )ϫ) reconstruction, with 1 3 monolayer of Pb or Sn adatoms, changes gradually to a 3ϫ3 phase when the temperature is lowered. As determined by surface x-ray diffraction, 3,4 the transition to the 3ϫ3 phase involves vertical atomic displacements in the adatom layer which give rise to sharp 3ϫ3 low-energy electron diffraction ͑LEED͒ spots. Scanning tunneling microscopy ͑STM͒ images of these surfaces show a transition from a )ϫ) to a 3ϫ3 unit cell, which has been attributed to the formation of a commensurate charge-density wave.1,2 Other electronic structure studies, concentrated on the Sn/Ge͑111͒ system, have been done by photoelectron spectroscopy.5-7 An interesting and rather puzzling result is that the electronic structures of the )ϫ) and 3ϫ3 surfaces are qualitatively quite similar. The two major Sn 4d components and the two surface-state bands that are observed find a natural explanation in a 3ϫ3 surface phase but are not directly accounted for in a )ϫ) periodicity.Although the Pb/Si͑111͒ and Sn/Si͑111͒ systems can be expected to behave in a similar way to their Ge͑111͒ counterparts, they have been much less studied. The fact that there is no report of a )ϫ) to 3ϫ3 transition on the Sn/Si͑111͒ surface seems to be reflected in the lower number of publications for this system. It is known, however, that the Sn 4d core level of the Sn/Si͑111͒ )ϫ) surface shows an unexpected second component.8 Inspired by this situation, we have used several techniques to address the interesting atomic and electronic structure of Sn/Si͑111͒.The Sn/Si͑111͒ )ϫ) surface has been studied using photoelectron spectroscopy, LEED, and STM. Various Sn coverages were investigated in order to find the optimum preparation of the )ϫ) surface. The use of roomtemperature STM allowed us to check the quality of the surfaces and to characterize the different types of defects that are present. In contrast to the Sn/Ge͑111͒ system, we do not observe any transition to a 3ϫ3 phase in LEED at temperatures down to 70 K, which was the lowest temperature in this study. Despite this difference we find that both the Sn 4d core-level and valence-band spectra show the...

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“…[16][17][18][19][20][21] In particular, the structural model of Bi adsorbed on Si(111) has been investigated experimentally [22][23][24][25][26][27] as well as theoretically [25]. The well-known structural reconstruction proposed for the √ 3× √ 3R30…”

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confidence: 99%

Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)-3×3substrate

et al. 2014

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Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn (√3×√3)R30° reconstructions

Cited by 47 publications

References 1 publication

Fermi surface and electronic structure of Pb/Ge(111)

Fermi surface and electronic structure of Pb/Ge(111)

Electronic structure ofSn/Si(111)3
Uhrberg
¹
,
Zhang
²
,
Balasubramanian
³

et al. 2000
Phys. Rev. B
56
12
43
0
View full text Add to dashboard Cite

Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)-3×3substrate

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Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn (√3×√3)R30° reconstructions

Cited by 47 publications

References 1 publication

Fermi surface and electronic structure of Pb/Ge(111)

Fermi surface and electronic structure of Pb/Ge(111)

Electronic structure ofSn/Si(111)3Uhrberg1, Zhang2, Balasubramanian3 et al. 2000Phys. Rev. B5612430View full textAdd to dashboardCite

Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)-3×3substrate

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Electronic structure ofSn/Si(111)3
Uhrberg
¹
,
Zhang
²
,
Balasubramanian
³

et al. 2000
Phys. Rev. B
56
12
43
0
View full text Add to dashboard Cite