Observation of true c(8 × 2) symmetry in scanning tunnelling microscopy images of the clean InSb(001) surface

Varekamp, P. R.; Björkqvist, M; Göthelid, Mats; Karlsson, Ulf O.

doi:10.1016/0039-6028(95)01343-1

Cited by 24 publications

(17 citation statements)

References 8 publications

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“…Between these bright rows are two more rows of features ͑marked B͒ that are somewhat less intense and evenly distributed along the ͓110͔ direction. This image, recorded with a bias voltage of Ϫ2.0 V and a tunnel current of 1.67 nA, differs from the previously published work of Schweitzer et al, 3 but is similar to the image produced by Varekamp et al 5 Marked on Fig. 1 are a series of (4ϫ2) blocks which have been arranged to form the overall c(8ϫ2) unit mesh seen in LEED.…”

supporting

confidence: 71%

“…3 They also observed a (4ϫ2) unit mesh in a relatively low quality empty states image, but there was insufficient data from which to derive any detailed structural information. 5 The observation of the true c(8ϫ2) unit mesh does, however, indicate that the double rows of bright spots cannot be due to second layer Sb atoms. Although noting this fact, Varekamp et al were unable to suggest an alternative structural model for the surface that agreed with their STM images.…”

mentioning

confidence: 95%

“…1,2 This has clearly been demonstrated by the controversy surrounding the InSb͑001͒-c(8ϫ2) surface reconstruction. [3][4][5] The initial model for the InSb(001)-c(8ϫ2) surface was proposed by John et al, 6 based on high energy electron diffraction, soft x-ray photoemission data and comparison with the same surface reconstruction previously observed by Biegleson et al for GaAs͑001͒ using scanning tunneling microscopy ͑STM͒. 7 This model had the surface terminated with 0.75 monolayer ͑ML͒ of indium ͓where 1 ML is the In concentration in a (1ϫ1) unreconstructed In-terminated surface͔, made up of blocks of three In dimers and a missing dimer forming a (4ϫ2) block with the dimer bonds parallel to the ͓110͔ direction, on top of a complete Sb layer.…”

mentioning

confidence: 99%

“…Varekamp et al 5 also studied the InSb(001)-c(8ϫ2) surface by STM, again prepared by low energy ion bombardment ͑500 eV͒ followed by annealing to 350-400°C. These authors were able to determine a true c(8ϫ2) symmetry in their filled states images.…”

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confidence: 99%

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Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface

Davis

Jones

Falkenberg

et al. 1999

Applied Physics Letters

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In this letter we present evidence from scanning tunneling microscopy studies in support of a recently proposed structural model for the indium-terminated c(8ϫ2) surface of InSb͑001͒. This structural model, by Norris and co-workers, is based on a surface x-ray diffraction study ͓Surf. Sci. 409, 27 ͑1998͔͒, and represents a significant departure from previously suggested models for the c(8ϫ2) reconstruction on any ͑001͒ surface of the common III-V semiconductor materials. Although filled state images of the InSb(001)-c(8ϫ2) surface have previously been published, empty states image of sufficient quality to extract any meaningful information have not previously been reported. The observations are in excellent agreement with the recently proposed model for this surface reconstruction.

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supporting

confidence: 71%

mentioning

confidence: 95%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface

Davis

Jones

Falkenberg

et al. 1999

Applied Physics Letters

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“…9,10 In addition, the cost of InSb substrates is far less than that of CdZnTe substrates. A variety of cleaning procedures including thermal desorption in the absence and in the presence of Sb overpressures, [11][12][13][14][15] atomic and molecular hydrogen treatments, [14][15][16][17] ion bombardment and annealing, 11,[18][19][20] and wet etches [21][22][23][24][25] have been reported to prepare InSb (111), (100), and (110) orientations. These studies address the problems associated with in vacuo thermal cleaning since the InSb oxide desorption temperature is close to the melting point of InSb ($527°C).…”

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confidence: 99%

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Jaime-Vasquez

Martinka

Stoltz

et al. 2008

Journal of Elec Materi

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Plasma etching of (112)B InSb to prepare this semiconductor for the heteroepitaxy deposition of CdTe and initial studies of CdTe epilayers grown by molecular beam epitaxy (MBE) on InSb (112)B substrates cleaned with various plasma treatments are presented. X-ray diffraction rocking curve maps of the MBE CdTe epilayers on 3-inch InSb (112)B substrates have full-width at half-maxima (FWHM) values in the range of 20 arcsec to 30 arcsec. An etch pit density analysis of the 3-inch CdTe epilayers reveals a defect density of 1.0 · 10 7 cm -2 and 7.7 · 10 5 cm -2 at the center and edge of the wafer, respectively. Evaluation of a standard HgCdTe annealing process suggests that the removal of the InSb substrate is likely to be needed prior to any postgrowth annealing in Hg overpressure. Finally, we present a low-energy helium plasma exposure of wet-etched InSb (112)B substrates that provides a uniform epi-ready surface that is nearly stoichiometric, and free of oxide and residual contaminants.

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Internal Architecture and Adsorption Sites of Violet Lander Molecules Assembled on Native and KBr‐Passivated InSb(001) Surfaces

et al. 2009

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The adsorption of individual Violet Lander molecules self-assembled on the c(8x2) reconstructed InSb(001) surface in its native form and on the surface passivated with one to three monolayers of KBr is investigated by means of low-temperature scanning tunneling microscopy (STM). Preferred adsorption sites of the molecules are found on flat terraces as well as at atomic step edges. For molecules immobilized on flat terraces, several different conformations are identified from STM images acquired with submolecular resolution and are explained by the rotation of the 3,5-di-tert-butylphenyl groups around sigma bonds, which allows adjustment of the molecular geometry to the anisotropic substrate structure. Formation of ordered molecular chains is found at steps running along substrate reconstruction rows, whereas at the steps oriented perpendicularly no intermolecular ordering is recorded. It is also shown that the molecules deposited at two or more monolayers of the epitaxial KBr spacer do not have any stable adsorption sites recorded with STM. Prospects for the manipulation of single molecules by using the STM tip on highly anisotropic substrates are also explored, and demonstrate the feasibility of controlled lateral displacement in all directions.

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Observation of true c(8 × 2) symmetry in scanning tunnelling microscopy images of the clean InSb(001) surface

Cited by 24 publications

References 8 publications

Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface

Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Internal Architecture and Adsorption Sites of Violet Lander Molecules Assembled on Native and KBr‐Passivated InSb(001) Surfaces

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