“…Owing to a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature, ZnO has received considerable attention as a promising material for optoelectronic devices. [10][11][12][13][14][15][16][17][18][19][20][21][22] In particular, ZnO nano/microstructures are ideal material candidates for many novel applications, such as nanoscale multiplexing biosensors, ultraviolet detectors, and electrically driven lasers. [23][24][25][26] To realize highly efficient optoelectronic devices, enormous efforts have been dedicated to fabricate doped ZnO semiconductor nanostructures with reproducible optical and electronic properties, including the controlled incorporation of n-type and p-type dopants, such as Al, Ga, N, Li, P, and so on.…”