Mn-doped Ge self-assembled quantum dots via dewetting of thin films

Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Караман, И.; Lee, Jun Young

doi:10.1016/j.apsusc.2016.11.087

Cited by 14 publications

(3 citation statements)

References 25 publications

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“…The second family is the diluted magnetic semiconductors (DMS) one. These materials are extensively studied, in particular the (Ga,Mn)As alloys with T C remaining below 200 K and the Ge 1−x Mn x with T C around 150 K [5,6,7,8,9].…”

Section: Introductionmentioning

confidence: 99%

Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

Petit

Boussadi

Heresanu

et al. 2019

Applied Surface Science

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Keywords:Step flow growthStep meandering Non-diffusive epitaxy Molecular beam epitaxy (MBE) Critical nucleation volume Mn 5 Ge 3 Interface Spintronic A B S T R A C TThe very first stages of the non-diffusive growth of Mn 5 Ge 3 thin films on Ge(111) substrates are characterized by several techniques. Mn 5 Ge 3 films are grown by molecular beam epitaxy using the co-deposition of Mn and Ge atoms at room temperature. XRD measurements demonstrate that the thin films are monocrystalline. The evolution of the RHEED intensity during the deposition and the AFM images show a step-flow growth mode. RHEED patterns, combined with TEM images, prove that the lattice mismatch of 3.7% is accommodated by the formation of an array of interfacial dislocations and by the presence of a residual strain in the thin films. These observations are supported by the numerical calculations of the critical nucleation volumes exhibiting very similar values, in the case of a pseudomorphic growth or in the case of an accommodation of the lattice mismatch by interfacial dislocations. Furthermore, the effect Ge/Mn stoichiometric and Mn-rich fluxes on the surface morphology is examined.

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Section: Introductionmentioning

confidence: 99%

Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

Petit

Boussadi

Heresanu

et al. 2019

Applied Surface Science

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“…11,12 Many efforts have been made in the field of Mn x Ge 1−x QDs to obtain stable and controllable ferromagnetism and a high T C . 13,14 The quantum confinement effect from Mn x Ge 1−x QDs could enhance the exchange coupling between holes and localized manganese dopants, which in turn enhances the ferromagnetic ordering. 15−17 Wang et al obtained Mn x Ge 1−x QDs with a Curie temperature of up to 400 K by molecular beam epitaxy (MBE), which provided the basis for spintronic devices operating normally at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Early fundamental works were focused on MnGe thin film structures. − Park et al discovered that the Curie temperature ( T C ) increased linearly with the Mn content from 25 to 116 K . However, due to low Mn solubility in Ge, the intermetallic precipitates of Mn and Ge were found in these films, which made the ferromagnetism properties of Mn x Ge 1– x thin films uncontrollable. , Many efforts have been made in the field of Mn x Ge 1– x QDs to obtain stable and controllable ferromagnetism and a high T C . , The quantum confinement effect from Mn x Ge 1– x QDs could enhance the exchange coupling between holes and localized manganese dopants, which in turn enhances the ferromagnetic ordering. − Wang et al obtained Mn x Ge 1– x QDs with a Curie temperature of up to 400 K by molecular beam epitaxy (MBE), which provided the basis for spintronic devices operating normally at room temperature . Duan et al utilized ion beam sputtering deposition (IBSD) technology to fabricate uniformly aligned Mn x Ge 1– x QDs with a Curie temperature of 383 K. The introduction of Te doping resulted in a 4.3-fold increase in saturation magnetization and a 7.9-fold increase in residual magnetization, providing an effective strategy for enhancing and modulating ferromagnetism in Mn x Ge 1– x DMSs.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Ferromagnetism of Mn_0.05Ge_0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Ye,

Lv,

et al. 2024

ACS Appl. Nano Mater.

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Mn x Ge 1−x quantum dots (QDs), with a high Curie temperature and superior magnetic properties, have significant application and research values for spintronic devices for high-density memory devices. However, the lattice mismatch between silicon and germanium leads to the formation of intermetallic precipitates, thereby constraining the utilization of Mn x Ge 1−x QDs in spintronic device applications. In this work, we report the first preparation of Mn 0.05 Ge 0.95 QDs/graphene heterostructures by ion beam cosputtering. Growth time-dependent QD density and formation of nanoislands were investigated systematically, indicating a transition of n-type to p-type conductivity in the sample with increasing deposition time, and high hole transport properties were observed in samples with quantum dots. A Curie temperature of 342 K observed in Mn x Ge 1−x QDs is higher than room temperature. Circularly polarized light-induced spin currents and linearly polarized light-excited currents were confirmed in the QD samples. The relationship between circularly polarized light-induced spin current signals and incident angles was examined. Our research offers a cost-effective method to integrate Mn x Ge 1−x low-dimensional materials with two-dimensional materials, achieving high Curie temperatures above room temperature along with favorable hole transport properties, thereby facilitating further studies on spintronic devices.

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MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications

Yahyaoui,

Aouassa,

Bouabdellaoui

et al. 2024

Appl. Phys. A

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Mn-doped Ge self-assembled quantum dots via dewetting of thin films

Cited by 14 publications

References 25 publications

Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

Microstructure and Ferromagnetism of Mn_0.05Ge_0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications

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Mn-doped Ge self-assembled quantum dots via dewetting of thin films

Cited by 14 publications

References 25 publications

Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications

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Product

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Microstructure and Ferromagnetism of Mn_0.05Ge_0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices