Mo/4H-SiC Schottky diodes for room temperature X-ray and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e693" altimg="si353.svg"><mml:mi>γ</mml:mi></mml:math>-ray spectroscopy

Lioliou, G.; Renz, Arne Benjamin; Shah, V. A.; Gammon, P. M.; Barnett, A. M.

doi:10.1016/j.nima.2022.166330

Cited by 8 publications

(5 citation statements)

References 41 publications

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“…Such behavior was not observed for the radiation response of the 4H-SiC SBDs to alpha particles, for example. With recent advances in using Mo as a Schottky contact [40], the Mo/4H-SiC SBDs were investigated as photon-counting detectors for X-ray and gamma-ray spectroscopy With recent advances in using Mo as a Schottky contact [40], the Mo/4H-SiC SBDs were investigated as photon-counting detectors for X-ray and gamma-ray spectroscopy [41]. Lioliou et al [41] used SBDs with a 35 µm-thick epitaxial layer and achieved an energy resolution of 1.67 keV FWHM at 5.9 keV and 1.6 keV FWHM at 59.54 keV, all measured at RT.…”

Section: Response To X-rays and Gamma Radiationmentioning

confidence: 99%

“…With recent advances in using Mo as a Schottky contact [40], the Mo/4H-SiC SBDs were investigated as photon-counting detectors for X-ray and gamma-ray spectroscopy With recent advances in using Mo as a Schottky contact [40], the Mo/4H-SiC SBDs were investigated as photon-counting detectors for X-ray and gamma-ray spectroscopy [41]. Lioliou et al [41] used SBDs with a 35 µm-thick epitaxial layer and achieved an energy resolution of 1.67 keV FWHM at 5.9 keV and 1.6 keV FWHM at 59.54 keV, all measured at RT. As seen from different studies on X-ray response measurements, energy resolution can be increased making additional on the 4H-SiC SBDs structure, mainly in Schottky contacts.…”

Section: Response To X-rays and Gamma Radiationmentioning

confidence: 99%

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4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan

2022

Electronics

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In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. The main achievements are highlighted, and the main challenges are discussed.

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Section: Response To X-rays and Gamma Radiationmentioning

confidence: 99%

Section: Response To X-rays and Gamma Radiationmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan

2022

Electronics

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“…With 4H-SiC SBD, an energy resolution of 1.47 keV FWHM at 22 keV at RT was reported. Lioliou et al [ 43 ] fabricated photon-counting detectors for X-ray and gamma-ray spectroscopy using the 35 µm thick 4H-SiC SBDs with Mo as a Schottky contact. An energy resolution of 1.67 keV FWHM at 5.9 keV and 1.6 keV FWHM at 59.54 keV was achieved.…”

Section: 4h-sicmentioning

confidence: 99%

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

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In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

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“…Such behaviour was not observed for the radiation response of the 4H-SiC SBDs to alpha particles, for example. With recent advances in using Mo as a Schottky contact [36], the Mo/4H-SiC SBDs have been investigated as photon counting detectors for X-ray and gamma-ray spectroscopy [37]. They have used SBDs with a 35 µm thick epitaxial layer, and achieved an energy resolution of 1.67 keV FWHM at 5.9 keV and 1.6 keV FWHM at 59.54 keV, all measured at RT.…”

Section: Response To X-rays and Gamma Radiationmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan¹

2022

Preprint

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In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. Main achievements are highlighted, and main challenges are discussed.

show abstract

Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy

Cited by 8 publications

References 41 publications

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Wide-Bandgap Semiconductors for Radiation Detection: A Review

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

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