Mobile handset power amplifiers

A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations

“…Commonly, GaAs HBT PAs have been used for linear PA applications at low-to-medium power levels for both handsets (usually in multichip modules (MCM)), and basestations (Franco 2009;Li, Zhu, Prikhodko and Tkachenko 2010). Advances in SiGe BiCMOS technologies, using the SiGe bipolar transistors for the amplifier and with possibility of higher integration using CMOS parts, make it interesting to evaluate the potential of this technology.…”

Development of High-Efficiency Switch-Mode Concurrent Dual-Band RF Power Amplifiers

“…where T is the period of the fundamental frequency. In (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12), it is shown that the average value of a half-wave rectified sine wave is 1/ of its peak value ( ). Finally, the drain efficiency can be obtained:…”

“…The theoretical maximum drain efficiency that can be achieved with a current-switching class-D PA is 100%, as indicated by (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13) The effects of knee voltage in VSCD PAs are discussed in [25,26,[41][42][43][44]. Due to the effects of knee voltage, CSCD PAs are claimed to have better performance than VSCD PAs [41][42][43][44].…”

“…The factor of is discussed in (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12). In PA designs, the maximum available power supply is always utilized for better efficiency; is thus easily determined by output power requirement.…”

“…A radio-frequency power amplifier (RFPA or simply PA) is the last stage in a transmitter and is used to drive the antennas. It is the most power-and area-consuming block in the whole wireless connectivity part of a wireless device (for example, a cellular phone) [1][2][3][4]. Fig.…”