Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition

Lee, Chong−Yi; Shiao, Hung-Pin; Kuo, Kuan-Chu; Wu, Hsin-Yen; Lin, Wen-Hsiang

doi:10.1116/1.2362783

Cited by 9 publications

(5 citation statements)

References 11 publications

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“…The strain effect of GaAs/InGaAs heterostructures on the electron mobility has been analysed [14][15][16][17][18][19][20]. Low temperature mobility of 2DEG in InGaAs/AlGaAs modulation-doped by acceptors and donors has been studied for its use in microwave transistors [21].…”

Section: Introductionmentioning

confidence: 99%

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda

Pradhan²,

Sahu³

et al. 2022

Phys. Scr.

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Nonmonotonic electron mobility is obtained in InxGa1-xAs/GaAs double quantum well pseudomorphic heterostructure field effect transistor by changing the structure parameters. We show that a rapid drop in mobility occurs at the point of resonance of sub-band states due to asymmetric variation of doping concentrations. The sub-band wave function distributions change significantly near the resonance and influence the sub-band mobilities through the scattering potentials, there by causing the dip in µ. The depth of nonlinearity in µ enhances by increasing the central barrier width and the difference between the well widths. On the other hand, variation of µ as a function of asymmetric change of well widths leads to a hump like raise in µ under unequal doping concentrations. Our results of nonlinear mobility can be utilized in low temperature transistor applications.

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Section: Introductionmentioning

confidence: 99%

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda

Pradhan²,

Sahu³

et al. 2022

Phys. Scr.

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“…The InGaAs based pseudomorphic high electron mobility transistors (p-HEMTs) support high power gain, low noise and exceptional cut-off frequency and also exhibit excellent logic characteristics [5][6][7]. The p-HEMTs with delta-doped channels show good performance in high speed applications [8][9][10]. Thin-channel p-HEMTs have been explored to have excellent current drive and sub-threshold swing [7,8,11].…”

Section: Introductionmentioning

confidence: 99%

“…This provides an additional degree of freedom to tailor the band structure of the material [14]. A number of works have been done on the study of the electron mobility μ of GaAs/InGaAs based p-HEMT structures [10][11][12][13][15][16][17][18][19][20]. It has been shown that in a multi-subband occupied quantum well system; μ substantially depends on the intersubband effects [17][18][19][20][21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

et al. 2020

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Non-monotonic mobility μ of electrons is obtained in a pseudomorphic GaAs/InxGa1−xAs high electron mobility transistor having double quantum well structure with asymmetric doping concentrations in the outer barriers. A dip in μ occurs close to the resonance of subband states because of the quantum mechanical transfer of the wave functions between the wells. Near resonance, the asymmetry in subband wave functions and anticrossing of energy levels as a function of doping concentration influence the intra- and intersubband scattering rate matrix elements. Near resonance, the subband wave functions spread asymmetrically and the energy levels exhibit anticrossing as a function of doping concentration thereby influencing the intra and intersubband scattering rate matrix elements. The dip in μ, which amplifies with raise in the asymmetry of the width of wells, is basically due to the subband mobilities limited by the interface roughness scattering. We also show that an appropriate selection of the structure parameters leads to a hump in mobility dominated by the intersubband effects on the screened ionized impurity scattering potential under double subband occupancy. The nonlinearity in μ can be utilized to study the characteristics improvement of devices such as high electron mobility transistors.

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“…Much effort has been made to study the enhancement of the electron mobility in the InGaAs-based pseudomorphic channels by employing different structure geometry and doping profiles. [10][11][12][13][14][15] A double quantum well is an interesting system because of the occurrence of tunneling coupling in addition to the quantum confinement of the carriers. 16,17) When two separate wells are brought closer to each other, their subband wave functions overlap through the central barrier, leading to the splitting of the subband energy levels.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Mohapatra

Sahu

Panda

et al. 2017

Jpn. J. Appl. Phys.

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We analyze the structural-asymmetry-induced nonlinear enhancement of the electron mobility μ in a GaAs/InxGa1−xAs double-quantum-well pseudomorphic high-electron-mobility transistor (p-HEMT). We consider the well widths wi and ws and the doping concentrations ndi and nds in the barriers along the substrate (inverted doping) and surface (surface doping), respectively. We show that for a suitable choice of ws and nds, the variation of wi leads to interesting changes in the occupation of subbands, i.e., first, single-subband, then double-subband, and again, single-subband occupancy. By increasing ndi, the range of double-subband occupancy is enhanced. However, the lowering of μ due to the inter-subband effects is minimized. In the case of a single-channel HEMT, i.e., say, for ndi = 0, only a single subband is occupied. The mobility exhibits a cusplike behavior with a minimum at a certain value of wi. If one takes a higher value of nds, the occupation of subbands shows a different trend, i.e., from single- to double-subband occupancy as a function of wi for different ndi values with nonmonotonic variations of μ. Our results of the nonlinear enhancement of mobility can be utilized for the analysis of the coupled GaAs/InxGa1−xAs double-quantum-well p-HEMT structure.

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Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition

Cited by 9 publications

References 11 publications

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

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