Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces

Extremely scaled silicon nano-CMOS devices

“…13). As compared with (100) silicon surfaces, hole mobility is enhanced while electron mobility is degraded in (110) surfaces [63]. These trends are consistent with previous reports of FinFET dependence on crystal orientation [12].…”

⟨100⟩-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

“…3 However, the device performance and the uniformity can be improved further by control of the crystallographic orientation of the channel of the TFTs. It is well known that electronic properties of metal oxide semiconductor field effect transistors 4,5 ͑MOSFETs͒ have a pronounced dependence on the surface and in-plane crystal orientations with respect to the direction of the current flow due to the anisotropy of the effective mass. If the surface and even the in-plane orientations in the channel of the TFTs can be controlled in the location controlled grain, this grain will be ideal for c-Si TFT fabrication.…”

One-Dimensional Nanotemplate Structure of a Si(110) Substrate

“…Recently, the Si(110) surface has attracted significant interest as a candidate for next-generation semiconductor devices because of its high hole mobility compared with that of other low-index Si surfaces [1][2][3]. At the same time, it is also known that Si(110) has a unique one-dimensional (1-D) 16×2 reconstructed structure [4][5][6][7].…”