Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

“…To evaluate the NBTI characteristics of PMOSFET, a negative bias of À2:8 V is applied to the gate with the ground potential of the source, drain, and substrate at an elevated temperature of 100 C. Figure 2 shows that the cumulative distributions of gate current density (J G ), which is extracted at V FB , are improved as the nitrogen concentration in PNO increases owing to the suppression of boron penetration, as is well known. 12) Figure 3 shows the threshold voltage shift (ÁV T ) under NBT stress for various nitrogen concentrations with a gate bias of À2:8 V. It is found that the exponent value is 0.20-0.23 for both TNO and PNO, which suggests that the same NBTI mechanism is dominant regardless of the nitridation method and nitrogen concentration. These results arise because nitrogen in the gate oxide replaces Si-O bonds with Si-N bonds during the nitridation and Si-N bonds are more breakable than Si-O under NBT stress.…”

Suppression of Nitridation-Induced Interface Traps and Hole Mobility Degradation by Nitrogen Plasma Nitridation

“…This is contrary to the eff p characteristics reported previously for thermal nitridation in which eff p generally degrades with increasing amount of nitridation. [5][6][7] Previous studies have attributed the degradation of eff p in thermally nitrided oxides to additional Coulombic scattering from nitridation-induced positive fixed charges and charged donor-like interface traps, as well as the reduction of mobile hole density due to hole trapping at nearinterfacial traps. [5][6][7] However, the eff p behavior of DPNO does not tally well with the nitridation-induced fixed-charge density trend as indicated by the flatband voltage shift.…”

“…[1][2][3] However, it has been widely recognized that nitrided oxides generally suffer significant degradation of channel hole mobility across all electric fields as compared to pure SiO 2 . 1,[4][5][6][7] On the other hand, nitrogen plasma nitridation has recently attracted considerable interest over NO nitridation for sub-0.13 m CMOS technology because of its superior efficiency in tailoring a higher amount of nitrogen near the polysilicon/SiO 2 interface. This nitrogen-rich layer not only increases the dielectric constant of an oxynitride which can be used for reducing tunneling leakage current, but also acts as an excellent barrier to suppress impurity penetration.…”

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“…5,6) Although nitrided oxides have been fabricated in a conventional horizontal furnace, they have also been fabricated by rapid thermal annealing processing using NH 3 or N 2 O. [7][8][9] However, the use of rapid thermal annealing processing requires the resolution of temperature control problems in order to achieve highly uniform oxides comparable to state-of-the-art vertical furnaces. From the manufacturing point of view, it is highly desirable to develop a process that does not deviate significantly from conventional processes to retain process simplicity.…”