2010
DOI: 10.1109/ted.2009.2037369
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Mobility Enhancement in Strained $n$ -FinFETs: Basic Insight and Stress Engineering

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Cited by 33 publications
(23 citation statements)
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“…• We showed that in FEM simulations the strain in narrow FinFET depends on the fin width, as was shown earlier in measurements [17].…”
Section: Original Contributionssupporting
confidence: 76%
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“…• We showed that in FEM simulations the strain in narrow FinFET depends on the fin width, as was shown earlier in measurements [17].…”
Section: Original Contributionssupporting
confidence: 76%
“…The strain is induced in plane with the fin/gate metal interface, therefore a narrower FinFET, which has a smaller volume, and approximately equal size interface, can be expected to have a larger amount of strain. Both finite element method (FEM) simulations and holographic interferometry measurements [17] confirm this.…”
Section: Strain In Finfetsmentioning
confidence: 61%
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“…The fitting parameters A and B are determined from two limits that D ac,eff at E eff = 0.1MV/cm is 12eV and D ac,eff at 1MV/cm is 18eV, and we used A = 9.34, B = 0.12 for a (100) orientation. Analytical expressions for the strain-induced valley splitting and effective mass changes of the (110)/<110> have been reported in [17]. However, the stress effect of valley and the effective mass in the (100)/<110> have not been explained.…”
Section: Mobility Simulationmentioning
confidence: 99%