extraordinary result. [2][3][4][5][6][7] A physical explanation for these results has remained elusive. The dopant size has been speculated to be a key parameter and larger dopants seem in general favorable compared to dopants with a smaller ionic radius than Hf. [2,8] This trend has been confirmed theoretically by Batra et al., [5] who additionally conclude that trivalent dopants in general are a good choice to favor the polar phase in HfO 2 . Large trivalent dopants, as the lanthanoid series are therefore especially suitable to promote ferroelectricity. In comparison to Gd, as another lanthanoid, La lowers the total energy difference to the monoclinic ground state the most. Also, they derived general trends that a larger ionic radius and a lower electronegativity of a dopant are favorable for the FE phase. Batra et al. [5] did not firmly conclude that La is the most favorable dopant to promote ferroelectricty in hafnia because a clear identification of the relaxed structures was not always possible and assumptions required concerning the distribution of oxygen vacancies and dopants in the high-throughput computational approach. They rather focused on the aforementioned general chemical trends of dopant attributes that promote the FE Pca2 1 phase. Further clarification of this trend could be provided by Materlik et al., [6] who compared La with Al and Y (also trivalent, but different in atomic radius) andThe outstanding remanent polarization of 40 µC cm -2 reported for a 10 nm thin La:HfO 2 film in 2013 has attracted much attention. However, up to now, no explanation for this large remanent polarization has been presented. Density functional theory and X-ray diffraction are used to shine light onto three major aspects that impact the macroscopically observed remanent polarization: phase fraction, spontaneous polarization, and crystallographic texture. Density functional theory calculations show that the spontaneous polarization (P s ) of La:HfO 2 is indeed a bit larger than for other HfO 2 -or ZrO 2 -based compounds; however, the P s is not large enough to explain the observed differences in remanent polarization. While neither phase fractions nor spontaneous polarization nor strain are significantly different from those in other HfO 2 films, a prominent 020/002 texture distinguishes La doped from other HfO 2 -based ferroelectric films. Angulardependent diffraction data provide a pathway to calculate the theoretically expected remanent polarization, which is in agreement with the experimental observations. Finally, an interplay of the in-plane strain and texture is proposed to impact the formation of the ferroelectric phase during annealing. Further aspects of the special role of La as a dopant are collected and discussed to motivate future research.