MOCVD and ALD of CeO<sub>2</sub> Thin Films using a Novel Monomeric Ce<sup>IV</sup> Alkoxide Precursor

Wrench, Jacqueline S.; Black, Kate; Aspinall, Helen C.; Jones, Anthony; Bacsa, John; Chalker, Paul R.; King, Peter; Werner, M.; Davies, Helen; Heys, Peter N.

doi:10.1002/cvde.200904279

Cited by 31 publications

(23 citation statements)

References 17 publications

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“…Both of the films exhibited a single (111) cubic diffraction peak with significant intensity. This agrees with a previous report on ALD CeO 2 using the same precursor . However, after high‐temperature annealing, increased peak intensity and decreased full width at half maximum (FWHM) value were observed, indicating an increase in film crystallinity.…”

Section: Resultssupporting

confidence: 92%

“…Atomic layer deposition (ALD) is a promising deposition method with great benefits including conformality, good uniformity, the controllability of atomic scale thickness, and low impurity contamination at low growth temperature due to a growth mechanism controlled by a self‐limited surface reaction . So far, only a few research groups have reported ALD CeO 2 films, and they simply focused on the growth characteristics of ALD CeO 2 , which might be attributed to the lack of a combination with a proper precursor and reactant . Thus, more detailed investigations are required as the studies have been limited only to the feasibility of ALD CeO 2 by newly synthesized Ce precursors.…”

Section: Introductionmentioning

confidence: 99%

“…Among several precursors, Ce(mmp) 4 [tetrakis(1‐methoxy‐2‐methyl‐2‐propanolate)cerium] seems to be preferable to get reasonable growth rates and layer purity even with water. However, it requires more detailed investigations as their studies have been limited only to the feasibility of ALD CeO 2 by newly synthesized Ce(mmp) 4 . Furthermore, there has been only one experimental report devoted to the ALD of Ce‐doped HfO 2 in spite of its technological importance .…”

Section: Introductionmentioning

confidence: 99%

“…That study employed a Ce(thd) 4 [tetrakis(2,2,6,6,‐tetramethylheptane‐3,5‐dionate)cerium] precursor with low volatile β‐diketonate complex for Ce doping, hence the use of highly reactive ozone was required as a reactant. It is thought this might lead to the formation of a low permittivity interfacial layer during the ALD process on Si substrate . No other comprehensive investigations with respect to various Ce/(Ce + Hf) concentrations have been performed.…”

Section: Introductionmentioning

confidence: 99%

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Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition

Kim

et al. 2014

J. Am. Ceram. Soc.

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Films of CeO 2 were deposited by atomic layer deposition (ALD) using a Ce(mmp) 4 [mmp = 1-methoxy-2-methyl-2-propanolate] precursor and H 2 O reactant. The growth characteristics and film properties of ALD CeO 2 were investigated. The ALD CeO 2 process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the ALD CeO 2 process, the effects of Ce doping into an HfO 2 gate dielectric were systematically investigated. Regardless of Ce/(Ce + Hf) composition, all ALD Ce x Hf 1x O 2 films exhibited constant growth rates of approximately 1.3 A/cycle, which is essentially identical to the ALD HfO 2 growth rates. After high-temperature vacuum annealing at 900°C, it was verified, based on X-ray diffraction and high-resolution cross-sectional transmission electron microscopy results, that all samples with various Ce/ (Ce + Hf) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal HfO 2 phases. In addition, the dielectric constant of the Ce x Hf 1x O 2 films significantly increased, depending on the Ce doping content. The maximum dielectric constant value was found to be nearly 39 for the Ce/(Ce + Hf) concentration of~11%.B. Dunn-contributing editor Manuscript No. 33319.

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Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition

Kim

et al. 2014

J. Am. Ceram. Soc.

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“…It has to be underlined that the atomistic simulations [20,21] show that the formation of crystallites exposing (100) surfaces is unstable because of the dipole generated perpendicular to it. However, the formation of polycrystalline CeO2 with all crystalline orientations is welldemonstrated experimentally by using different growth methods [12,13], and more generally it can be justified considering defects or charge compensating species, i.e. oxygen vacancies due to Ce 3+ : Ce 4+ substitution.…”

Section: Discussionmentioning

confidence: 99%

Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties

Vangelista

Piagge

et al. 2017

MRS Advances

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Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN. In correspondence, we measure a relative concentration of Ce 3+ equals to 22.0% in CeO2/Si and around 18% in CeO2/TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results extend the knowledge on the structural and chemical properties of ALD-deposited CeO2 either on Si or TiN substrates, underlying films differences and similarities, thus contributing to boost the use of CeO2 through ALD deposition as foreseen in a wide number of applications.

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Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Ghazy,

Zanders,

Devi

et al. 2024

Adv Materials Inter

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High‐quality rare earth element (R) based thin films are in demand for applications ranging from (opto)electronics and energy conversion/storage to medical diagnostics, imaging and security technologies. Atomic layer deposition (ALD) offers large‐area homogeneous and conformal ultrathin films and is uniquely suited to address the requirements set by the potential applications of R‐based thin films. The history starts from the 1990s, when the first electroluminescent R‐doped thin films were grown with ALD. The interest soon expanded to rare earth element oxide layers as high‐k gate dielectrics in semiconductor devices, and later to complex ternary and quaternary perovskite oxides with novel functional properties. The most recent advancements related to the combined atomic/molecular layer deposition (ALD/MLD) have rapidly expanded the family of R‐organic hybrid materials with intriguing luminescence and up‐conversion properties. This review provides up‐to‐date insights to the current state of ALD and ALD/MLD research of R‐based thin films and highlights their application potential.

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MOCVD and ALD of CeO₂ Thin Films using a Novel Monomeric Ce^IV Alkoxide Precursor

Cited by 31 publications

References 17 publications

Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition

Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition

Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

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MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor

Cited by 31 publications

References 17 publications

Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Contact Info

Product

Resources

About

MOCVD and ALD of CeO₂ Thin Films using a Novel Monomeric Ce^IV Alkoxide Precursor

Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition

Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition