Significant Enhancement of the Dielectric Constant through the Doping of <scp><scp>CeO</scp></scp><sub>2</sub> into <scp><scp>HfO</scp></scp><sub>2</sub> by Atomic Layer Deposition

Kim, Woo Hee; Kim, Min Kyu; Oh, Il‐Kwon; Maeng, W. J.; Cheon, Taehoon; Kim, Soo Hyun; Noori, Atif; Thompson, David M.; Chu, Schubert

doi:10.1111/jace.12762

Cited by 18 publications

(6 citation statements)

References 21 publications

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“…In addition, for the realization of the diffusion doping process with a controllable amount of boron doping, we performed an ALD supercycle process for B 2 O 3 doping into SiO 2 . 19 One supercycle is composed of n repetitions of alternating B 2 O 3 and SiO 2 growth cycles. This allows facile modulation of the B/(B + Si) composition in the ALD B-doped SiO 2 lms.…”

Section: Experimental Methodsmentioning

confidence: 99%

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Kim

et al. 2014

J. Mater. Chem. C

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We investigated atomic layer deposition (ALD) of B 2 O 3 and SiO 2 thin films using trimethylborate (TMB) and bis-(diethylamino)silane (SAM-24) precursors, focusing on growth characteristics and film properties. For both cases, ALD processes using O 3 and O 2 plasma as reactants exhibited well-defined growth saturation and linear growth behavior without any incubation cycles, and produced highly pure, stoichiometric films. In the case of B 2 O 3 films, however, SiO 2 layer passivation is required onto the B 2 O 3 due to a spontaneous decomposition caused by moisture in air. On the basis of electrical characterization, the detailed dielectric properties of SiO 2 and B 2 O 3 /passivation SiO 2 films were extensively discussed including the k-value, flat band voltage, and leakage currents. Then, boron-doped SiO 2 films with different B/(B + Si) compositions were prepared by controlling B 2 O 3 and SiO 2 growth cycles, followed by drive-in annealing and a subsequent wet removal process. Based on both theoretical estimation and SIMS depth profile results, we demonstrated that the surface doping concentration is effectively modulated with controllable B doping contents in the B-doped SiO 2 films.

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Section: Experimental Methodsmentioning

confidence: 99%

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Kim

et al. 2014

J. Mater. Chem. C

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“…Atomic layer deposition (ALD), which is based on surface reactions between precursors and reactants, has benefits such as high purity, thickness control on the atomic scale and large area uniformity 24 25 . In particular, it is suitable for the synthesis of alloy thin films with precisely controlled composition using the super-cycle method 26 27 28 . In addition, a continuous super-cycle process with different cycle ratios can produce a VCC multilayer with a clean interface 29 .…”

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confidence: 99%

Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

et al. 2015

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The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis process for Mo1−xWxS2 alloy using sulfurization of super-cycle atomic layer deposition Mo1−xWxOy. Various spectroscopic and microscopic results indicate that the synthesized Mo1−xWxS2 alloys have complete mixing of Mo and W atoms and tunable band gap by systematically controlled composition and layer number. Based on this, we synthesize a vertically composition-controlled (VCC) Mo1−xWxS2 multilayer using five continuous super-cycles with different cycle ratios for each super-cycle. Angle-resolved X-ray photoemission spectroscopy, Raman and ultraviolet–visible spectrophotometer results reveal that a VCC Mo1−xWxS2 multilayer has different vertical composition and broadband light absorption with strong interlayer coupling within a VCC Mo1−xWxS2 multilayer. Further, we demonstrate that a VCC Mo1−xWxS2 multilayer photodetector generates three to four times greater photocurrent than MoS2- and WS2-based devices, owing to the broadband light absorption.

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“…Capacitance–voltage (C–V) curves were collected using a Keithley 590 C–V analyzer and Agilent 4155C semiconductor parameter analyzer, respectively. The dielectric constant and related parameters were evaluated using methods reported previously. , …”

Section: Methodsmentioning

confidence: 99%

“…The dielectric constant and related parameters were evaluated using methods reported previously. 20,21 ■ RESULTS AND DISCUSSION A higher GPC of SiOC deposition is desired in ASD, as it reduces the number of cycles required to achieve the target thickness and the time for which the inhibitor is exposed to the reactive species in the deposition chamber. We therefore optimized the MLD process for a higher GPC by tuning the deposition temperature, considering that a high temperature could promote the reaction kinetics.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric

Bobb-Semple

et al. 2021

Chem. Mater.

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Area-selective deposition (ASD) of low-k materials is desired in back-end-of-line processes for fabricating nanopatterns such as fully self-aligned vias. However, the high temperature and/or aggressive coreactants used in conventional low-k material deposition have limited the application of the organic inhibitors used in ASD. Here, we report a strategy to selectively deposit low-k methylene-bridged silicon oxycarbide (SiOC) thin films on metal/dielectric patterns by combining growth using molecular layer deposition (MLD) and inhibition using self-assembled monolayers (SAMs). By using bis (trichlorosilyl)-methane and water as a precursor and coreactant, respectively, SiOC thin films with a dielectric constant of 3.6–3.8 are deposited at 40 °C and at a growth rate of 1.5 Å/cycle. We demonstrate area-selective MLD of this SiOC material for up to 30 cycles (equiv. 4.5 nm) on SiO2 vs Cu using a dodecanethiol SAM to block growth on Cu, and up to 70 cycles (equiv. 10 nm) on SiO2 vs Al using an octadecylphosphonic acid SAM to block growth on native oxide-covered Al. Positive and negative pattern transfer of SiOC films on a Cu/Al2O3 pattern is exhibited as a proof of concept. Moreover, because the Cu substrates are contaminated by HCl which is generated as a byproduct in the MLD process, we develop a mild post-treatment method using ethanol to remove chlorine residues.

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Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition

Cited by 18 publications

References 21 publications

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric

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Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

Cited by 18 publications

References 21 publications

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric

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Significant Enhancement of the Dielectric Constant through the Doping of CeO₂ into HfO₂ by Atomic Layer Deposition