MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact

Bulaev, P.V.; Kapitonov, V. A.; Lutetskii, A. V.; Маrmalyuk, А. А.; Nikitin, D. B.; Nikolaev, D. N.; Падалица, А. А.; Pikhtin, N. A.; Bondarev, A. D.; Zalevskii, I D; Tarasov, I. S.

doi:10.1134/1.1507292

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…We studied semiconductor lasers based on an asymmetric separate-confinement quantum-well heterostructure with a broadened waveguide grown by the MOVPE method [10]. At present, this laser structure is standard and commonly used in cw semiconductor lasers, but it is not optimised for operating in pulsed regime.…”

Section: Experimental Samples and Main Methodsmentioning

confidence: 99%

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Veselov¹,

Kapitonov²,

Pikhtin³

et al. 2014

Quantum Electron.

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Semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide and emitting in the wavelength range 1.0 -1.1 mm are studied. It is found that the intensity of spontaneous emission from the active region increases with increasing pump current above the lasing threshold and that this is caused by a growth in the concentration of charge carriers in the active region due to the modal gain enhancement needed to compensate for the growing internal optical loss at high pulsed pump currents. It is shown that the increase in the internal optical loss with increasing pulsed pump current is one of the main reasons for saturation of the light -current characteristics of high-power semiconductor lasers.

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Section: Experimental Samples and Main Methodsmentioning

confidence: 99%

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Veselov¹,

Kapitonov²,

Pikhtin³

et al. 2014

Quantum Electron.

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“…The composition and thickness of the waveguide layers in the structures were widely var ied. The table lists characteristics of the laser hetero structures under study, grown by metal organic vapor phase epitaxy (MOVPE) [12]. All the heterostructures emitted light at a wavelength of λ ≈ 1060 nm.…”

Section: Experimental Samples and Main Research Proceduresmentioning

confidence: 99%

On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

et al. 2014

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“…1). The structure was grown by metal-organic chemical vapour deposition [19]. Using standard post-growth operations [20], a mesastripe-construction laser (with the stripe width of 100 µm and Fabry-Pérot cavity length of 2.5 mm) was fabricated from this structure.…”

mentioning

confidence: 99%

Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser

Sokolova¹,

Bakhvalov²,

Lyutetskiy³

et al. 2015

Electron. lett.

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A simple method for the determination of the capture velocity of charge carriers from a three-dimensional (3D) region (waveguide region) into a 2D region (quantum well) is proposed. The method is based on measurement of the threshold current density and internal differential quantum efficiency in a semiconductor laser structure. The method also allows determining the 2D carrier density in a quantum well, which is otherwise not easy to measure in a multilayer laser structure.

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MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact

Cited by 8 publications

References 3 publications

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser

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