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The indium atom distribution in InGaAs/(Al)GaAs quantum wells (QWs) grown by metal-organic chemical vapour deposition was systematically studied. High-resolution grazing-sputter-angle Auger electron spectroscopy was used as a method of indium depth profile investigation. A broadening and shift to the surface of the indium concentration profile in a single QW and an increase of indium content in the upper QW for closely spaced QWs were found. These results were confirmed by photoluminescence measurements. It was observed that the use of AlGaAs barriers between QWs and growth interruptions at QW interfaces during the growth process reduce indium surface segregation.

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