Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

Bulaev, P.V.; Маrmalyuk, А. А.; Падалица, А. А.; Nikitin, D. B.; Zalevsky, Igor Dmitrievich; Kapitonov, V. A.; Nikolaev, D. N.; Pikhtin, N. A.; Lyutetskiy, A. V.; Tarasov, I. S.

doi:10.1016/s0022-0248(02)01871-7

Cited by 12 publications

(8 citation statements)

References 10 publications

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“…Carbon has proven to be a successful alternative for zinc as a p-type doping material for GaAs in various kinds of devices like lasers [1] and tandem solar cells [2]. Doping levels well above 1 Â 10 20 [3,4].…”

Section: Introductionmentioning

confidence: 99%

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Deelen

Bauhuis

Schermer

et al. 2004

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Deelen

Bauhuis

Schermer

et al. 2004

Journal of Crystal Growth

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“…Разработка новых методов легирования [12], включа-ющих точный контроль уровня легирования [13] и новые способы реактивации примесей [14,15], привела к значи-тельному улучшению качества эпитаксиальных слоев и, как следствие, расширила сферу их применения [16,17]. Основными легирующими примесями в A III B V являются углерод и кремний.…”

Section: Introductionunclassified

Эпитаксиальные твердые растворы Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As : Mg с различным типом проводимости

Seredin¹,

Lenshin²,

Арсентьев³

et al. 2017

Физика И Техника Полупроводников

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На основе методов высокоразрешающей рентгеновской дифракции, рамановской и фотолюминесцентной спектроскопии исследованы структурные, оптические и энергетические свойства эпитаксиальных гетероструктур AlxGa1-xAs : Mg/GaAs(100) с различной степенью легирования магнием. Показано, что подбором технологических условий в твердом растворе AlxGa1-xAs : Mg может быть достигнут не только различный тип проводимости, но и существенно различная концентрация носителей заряда в эпитаксиальной пленке. DOI: 10.21883/FTP.2017.01.8342

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“…) is strictly related to the realization of many devices, such as HBT transistors [1], high power laser diodes [2] and tunnel junctions in monolithic tandem solar cells [3]. In general, beyond the high optical and electrical quality of the p-doped GaAs layers, it is desirable that they also exhibit a mirror smooth surface morphology, so that it is very important to understand the correlation between the growth parameters and the quality of the layers, particularly in the MOVPE growth.…”

Section: Introductionmentioning

confidence: 99%

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Begotti¹,

Ghezzi²,

Longo³

et al. 2005

Cryst. Res. Technol.

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The properties of Zinc-doped GaAs, grown by MOVPE employing the tertiary buthyl arsine precursor, were studied as a function of the doping level, comprised within the (1×10) range. Hall effect measurements were performed as a function of temperature; the simultaneous analysis of the Hall hole density and Hall mobility gave the effective doping concentration, the thermal ionisation energy of the acceptor impurities and the compensation ratio. Fast Fourier Transform Photoluminescence measurements were performed on the GaAs layers; the results were correlated with those obtained from the electrical analysis. A comparison of the obtained data with the results of an analogous investigation, previously performed on intrinsically Carbon doped GaAs layers, allowed the following conclusions: a) the GaAs layers exhibit a low content of non-intentional impurities (< 10 14 cm -3); b) both Zinc and Carbon show a low compensation ratio; c) both Carbon and Zinc doped layers show electrical and optical properties comparable with the state of the art; d) Carbon intrinsic doping appears preferable for low-medium carrier concentrations, while Zinc appears preferable for medium-high carrier concentrations (higher than about 5×10 17 cm -3 ).

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Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

Cited by 12 publications

References 10 publications

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Эпитаксиальные твердые растворы Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As : Mg с различным типом проводимости

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

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