MOCVD growth of CuInSe2: first results

Sagnes, B.; Salesse, A.; Artaud, M.C.; Duchemin, S.; Bougnot, J.; Bougnot, G.

doi:10.1016/0022-0248(92)90527-p

Cited by 21 publications

(14 citation statements)

References 11 publications

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“…A challenge for MOCVD deposition is the low volatility of Cu precursors, which normally requires working at source temperatures above 80 1C. Sagnes et al [14] investigated precursors for lower temperature deposition and used (hfa) 2 Cu as the first step in synthesising CIS films. A two-step process was also used by Gallon et al [15] where In 2 Se 3 films were deposited at 350 1C in the first step followed by Cu deposition at the same temperature.…”

Section: Cdte and Cis Pv Solar Cellsmentioning

confidence: 99%

MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

Irvine¹,

Barrioz²,

Lamb³

et al. 2008

Journal of Crystal Growth

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Section: Cdte and Cis Pv Solar Cellsmentioning

confidence: 99%

MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

Irvine¹,

Barrioz²,

Lamb³

et al. 2008

Journal of Crystal Growth

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“…The growth system, designed and built in our laboratory [19], has a horizontal reactor operating at atmospheric pressure; it is possible to vary the temperature of both indium and copper metallorganic precursors by using a thermostatically controlled bath. Due to the high reactivity between H2Se and the metallorganic sources, and in order to avoid preliminary reactions, a double manifold is used to separate metal and selenium precursors until they enter the reaction chamber.…”

Section: Description Of the Mocvd Systemmentioning

confidence: 99%

“…Preliminary experiments on copper, binary Cu-Se and In-Se alloy deposition have allowed us to determine the fabrication parameters for the best use of the different sources [19]. Growth of ternary Cu In-Se layers has been performed under excess Se and Cu in the vapour phase by codeposition of the elements.…”

Section: Fabrication Parametersmentioning

confidence: 99%

Growth of CuInSe2 by metallorganic chemical vapour deposition (MOCVD): new copper precursor

Duchemin

Artaud

Ouchen

et al. 1996

J Mater Sci: Mater Electron

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Metallorganic chemical vapour deposition (MOCVD) of Cu-ln-Se ternary compounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is hexafluoroacetylacetonato copper mixed with trimethylamine (Cu(hfa)z, NMe3). The other source materials are triethylindium (TEIn), trimethylindium (TMIn) and hydrogen selenide (HzSe). Experimental parameters are detailed and related to the film composition. Properties of thin films are also investigated in the whole range of compositions obtained.

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“…al. reported spray CVD of CuInS 2 films using a single-source precursor, (Ph 3 P) 2 Cu([t-SEt) 2 In(SEt) 2 . In their study, highly orientated CuInS 2 was deposited on Si(l 11) substrates at 600 °C.…”

Section: Introductionmentioning

confidence: 99%

“…CuInSe 2 films contaminated with In 2 Se 3 have been deposited by MOCVD using copper(II) hexafluoroacetylacetonate mixed with trimethylamine, triethyl indium and hydrogen selenide. [2,3] A plasma enhanced process using both hexafluoroacetylacetonate copper and indium complexes and a novel selenium source 4-methyl-l,2,3-selenadiazole has also been used. [4] Chichibu has reported [5] the growth of heteroepitaxial layers of CuInSe 2 using cyclopentadienylcoppertriethylphosphine, trimethyl indium and diethylselenide as the precursors; the first successful MOVPE results.…”

Section: Introductionmentioning

confidence: 99%

New Approach Towards The Deposition of I-III-VI Thin Films

et al. 2001

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The ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S) 2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III= Ga or In, VI = S or Se) thin films (CuGaS 2 , CuInS 2 and CuInSe 2 ) were prepared from a series of organometallic precursors, M[(S/Se) 2 CNMeR], (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR 3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.

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MOCVD growth of CuInSe2: first results

Cited by 21 publications

References 11 publications

MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

Growth of CuInSe2 by metallorganic chemical vapour deposition (MOCVD): new copper precursor

New Approach Towards The Deposition of I-III-VI Thin Films

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