MOCVD indium sulphide for application as a buffer layer in CIGS solar cells

Spiering, S.; Bürkert, Linda; Hariskos, Dimitrios; Powalla, Michael; Dimmler, B.; Giesen, C.; Heuken, M.

doi:10.1016/j.tsf.2008.11.004

Cited by 26 publications

(12 citation statements)

References 9 publications

(8 reference statements)

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“…Among the chemical methods used for the preparation of In 2 S 3 thin films are metal-organic chemical vapor deposition [7], atomic layer deposition [8], thermal evaporation technique [9], modulated flux deposition [10], spray pyrolysis [11], electrodeposition [12], and chemical bath deposition (CBD) [1,13]. CBD has been recognized as the simplest and most economical method to obtain semiconductor thin films.…”

Section: Introductionmentioning

confidence: 99%

Indium sulfide thin films as window layer in chemically deposited solar cells

et al. 2014

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Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 . Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In 2 S 3 thin films are photosensitive with an electrical conductivity value in the range of 10, depending on the film preparation conditions. We have demonstrated that the In 2 S 3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO 2 :F/In 2 S 3 /Sb 2 S 3 /PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm 2 .

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Section: Introductionmentioning

confidence: 99%

Indium sulfide thin films as window layer in chemically deposited solar cells

et al. 2014

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“…The substrate temperature was varied between 300 and 500°C, whereas the deposition time was 20 min. The solar cell (glass/Mo/CIGS/In x S y /i-ZnO/ZnO:Al/Ni) yielded the record efficiency of 12.3% (under standard test conditions of 100 mW/cm 2 AM 1.5 illumination and 25°C) after 5 min post-annealing treatment at 200°C in air (Spiering et al, 2009). However, the reproducibility of the results was not investigated due to poor homogeneity of the films at low deposition temperatures of 300-325°C.…”

Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning

confidence: 99%

“…However, the current collection was slightly below the reference cell for longer wavelengths. Further improvement in the performance of the device will depend heavily upon the improved homogeneity of the In 2 S 3 films at low temperatures (Spiering et al, 2009).…”

Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning

confidence: 99%

Progress in indium (III) sulfide (In 2 S 3 ) buffer layer deposition techniques for CIS, CIGS, and CdTe-based thin film solar cells

2015

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“…Moreover, it is desirable when the new material provides a wider band gap energy (> 2.4 eV) than CdS to achieve higher spectral re-sponse in the blue region. Up to now, the reported alternative buffer materials include ZnO [2], In(OH) x S y [3,4], In 2 S 3 [5,6], ZnS [7], and MnS. In particular, cadmium free buffer such as In(OH) x S y (Eg ≈ 2.54 eV [8]) thin films can be promising candidate for the buffer layers for CIGS cells.…”

Section: Introduction 1)mentioning

confidence: 99%

Preparation of Cadmium-free Buffer Layers for CIGS Solar Cells

Moon¹,

Kim²,

Yoo³

et al. 2014

Applied Chemistry for Engineering

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CIGS 태양 전지용 cadmium (Cd)-free In(OH) x S y 버퍼층을 화학적 용액성장법을 이용해서 형성시켰고 최적 반응시간을 파악하였다. 투과율 측정과 함께 이온집적빔 시스템으로 직접 박막을 관찰해서 박막성장 조건을 최적화 하였으며 X 선 회절분석법과 X선 광전자 분광법, 주사현미경을 이용해서 박막의 특성을 파악하였다. 그 결과 In(OH) x S y 버퍼층의 증착을 위한 최적 반응 시간은 온도 섭씨 70°의 조건에서 20 min임을 확인하였으며, 이때의 버퍼층의 두께는 57 nm 가량이었고 밴드갭 에너지는 2.7 eV를 나타내었다. 아울러 molybdenum (Mo)층과 CIGS층 위에서 In(OH) x S y 버퍼층을 형성시키는 경우에 XPS 피크의 차이는 볼 수 없었다. AbstractIndium hydroxy sulfide (In(OH) x S y ) as a cadmium (Cd)-free buffer layer for CuInGaSe 2 (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for In(OH) x S y buffer layer deposition by CBD was 20 min at 70 ℃ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

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MOCVD indium sulphide for application as a buffer layer in CIGS solar cells

Cited by 26 publications

References 9 publications

Indium sulfide thin films as window layer in chemically deposited solar cells

Indium sulfide thin films as window layer in chemically deposited solar cells

Progress in indium (III) sulfide (In 2 S 3 ) buffer layer deposition techniques for CIS, CIGS, and CdTe-based thin film solar cells

Preparation of Cadmium-free Buffer Layers for CIGS Solar Cells

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