MOCVD of Aluminum Oxide/Hydroxide onto Organic Self-Assembled Monolayers

Wohlfart, Peter; Weiß, J.; Käshammer, Josua; Kreiter, Maximilian; Winter, Carl; Fischer, Roland A.; Mittler‐Neher, Silvia

doi:10.1002/(sici)1521-3862(199908)5:4<165::aid-cvde165>3.0.co;2-q

Cited by 21 publications

(20 citation statements)

References 7 publications

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“…There has still been limited reporting of the application of SSIMS to relatively ionic materials (see Refs 7, 24, 27–29 and the review by Adriens et al 3). One directly comparable system is the MOCVD‐deposited aluminium oxide/hydroxide films reported by Wohlfart et al 30 Spontaneous desorption ToF mass spectrometry was used to examine the composition of Al, O and OH thin films deposited on a gold thiol self‐assembled monolayer. Although indexed in a slightly different manner, the molecular ions observed are essentially identical to those reported here.…”

Section: Resultsmentioning

confidence: 89%

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Static SIMS studies of the oxides and hydroxides of aluminium

Verdier

Metson

Dunlop³

2006

J. Mass Spectrom.

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The degree of hydroxylation or hydration of aluminium surfaces has been examined by static secondary ion mass spectroscopy (SSIMS). The SSIMS spectra of a series of aluminium oxide, oxyhydroxide and hydroxide surfaces have been obtained using instruments in three configurations. Similarities were observed in both negative and positive secondary ions spectra. Even though a direct comparison of the relative intensities cannot be made from one instrument to the other, a similar ranking of the various aluminium hydroxylation states was observed. Several ranking methods are discussed, as well as the similarities and differences observed while using the three instruments. Similar secondary ions were detected whatever the degree of hydroxylation of the aluminium oxide. This argues in favour of the formation of fragments by the combination of individually sputtered atoms or clusters to form the more stable secondaries, rather than the kick-off of 'structure-related' clusters originating directly from the upper surface layer.

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Section: Resultsmentioning

confidence: 89%

“…As demonstrated in the indexing of Wohlfart et al ,30 the ions observed are unambiguous in terms of their mass assignment, but ambiguous in how the stoichiometry of the ion is reported. For example, the mass difference between each member of a family Al x O y is 18 Da.…”

Section: Resultsmentioning

confidence: 99%

Static SIMS studies of the oxides and hydroxides of aluminium

Verdier

Metson

Dunlop³

2006

J. Mass Spectrom.

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“…49 On an uSH terminated SAM, sufficiently short exposures to cyclopentadienyl-allyl-palladium, ͑C 5 H 5 ͒Pd͑C 3 H 5 ͒ lead to a plateau in Pd coverage. Such properties may be useful for devices that require a robust electrical connection between the ͑metal͒ electrodes and the organic without causing disruptions to the organic molecule or short circuits.…”

Section: Introductionmentioning

confidence: 99%

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Interactions between radical growth precursors on plasma-deposited silicon thin-film surfacesThe interfaces between inorganic and organic materials are important to a wide variety of technologies. A significant challenge concerns the formation of these interfaces when the inorganic layer must be grown on a pre-existing organic layer. In this review the authors focus on fundamental aspects of inorganic-organic interface formation using transition metal coordination complexes and atomic layer deposition. First, the authors discuss aspects of the synthesis and characterization of ultrathin interfacial organic layers, formed mostly on SiO 2 and possessing a variety of functional groups, including layers with a branched microstructure. The authors go on to discuss the reactions of transition metal coordination complexes with these layers. A number of factors control the uptake of the transition metal complex and the composition of the adsorbed species that are formed. These include the identity, density, and dimensionality or spatial distribution of the functional groups. At room temperature, adsorption on layers that lack functional groups results in the penetration of the organic layer by the transition metal complex and the reaction with residual uOH at the organic/SiO 2 interface. Adsorption on layers with a mostly two-dimensional arrangement of reactive functional groups results in the formation of molecular "bipods," where the surface bound functional groups react with the complex via two ligand exchange reactions. In contrast, for layers that possess a high density of functional groups arranged three dimensionally, the transition metal complex can be virtually stripped of its ligands. Atomic layer deposition on interfacial organic layers also depends strongly on the density and accessibility of reactive functional groups. On surfaces that possess a high density of functional groups, deployed two dimensionally, growth via atomic layer deposition is initially weakly attenuated, mostly uniform and smooth, and eventually evolves to growth characteristic of unmodified SiO 2 . Growth on layers that lack sufficient densities of functional groups is initially strongly attenuated, in contrast, and the resulting films are rough, severely islanded and three dimensional. As a consequence, there is a correlation between the strength of the initial attenuation in the rate of growth and the thin film morphology. Correlations between the initial uptake of the transition metal complex by the organic layer and the initial rate of thin film growth are less direct, however, as the composition and structure of the chemisorbed species must also be considered.

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“…Although the formation of organic films on inorganic surfaces (organic/inorganic) has been studied extensively, in particular, in the development of organic field effect transistors [1], detailed studies on the deposition of inorganic films onto organic surfaces (inorganic/organic) have been dominated by metals deposited on self-assembled monolayers (SAMs) [2][3][4][5]. However, various metal oxides are also of interest in developing the encapsulation films on organic surfaces [6][7][8][9]. In this paper, we describe the growth of aluminum oxide (AlO x ) on CH 3 -terminated SAMs (hydrophobic surfaces) by atomic layer deposition (ALD) (Model Savanna 100, Cambridge NanoTech, Inc., Cambridge, Massachusetts, USA) at low temperature to minimize the chemical and physical impact on the organic layers.…”

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confidence: 99%