Mode confinement and near field intensity analysis in a GaN-based blue–green laser diode

Samuel, Edmund; Bhole, M. P.; Patil, D. S.

doi:10.1088/0268-1242/21/8/001

Cited by 17 publications

(9 citation statements)

References 17 publications

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“…The near-field shows a spatial intensity distribution of the emitted light near the wave-guide end face while the angular intensity distribution far from the end face is known as the far-field. We have already carried out near-field intensity analysis recently for a GaN based channel substrate planar laser diode [6].…”

Section: Mathematical Analysismentioning

confidence: 99%

“…Therefore, spatial distribution of the optical field is just associated with the transverse mode along the Y direction which is solved from the wave equation [6]:…”

Section: Mathematical Analysismentioning

confidence: 99%

“…The blue laser diodes using GaN [5,6] and ZnSe [7] based materials have been realized successfully. As an alternative to the GaN material system, zinc oxide (ZnO) is a key technological compound semiconductor material having a wide band gap of 3.37 eV at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of near- and far-field intensities in ZnO based heterostructure waveguides

Bhole

Samuel

Patil

2008

Journal of Modern Optics

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Analysis of near-and far-field intensities in a simple double heterostructure of ZnO/ Mg x Zn 1Àx O and hybrid double heterostructure of Al x Ga 1Àx N/ZnO have been carried out at 375 nm wavelength. Near-and far-field intensity distribution along the junction plane has been studied as a function of mole fractions of Mg and Al for varying active layer thickness. The spread of the near-and far-field intensities has been estimated and articulated as full width at half maximum (FWHM). For near-field, FWHM was found to be decreasing nonlinearly with increase of Mg mole fraction in the simple heterostructure and increasing in a nonlinear manner with the increase of Al mole fraction in the hybrid heterostructure. FWHM deduced from our analysis was 0.355 mm for 7% and 0.156 mm for 27% Mg mole fraction. For the hybrid heterostructure, the FWHM values estimated were 0.1275 and 0.1397 mm, respectively. Confinement factor as a function of mole fractions and active layer thickness has been explored and it was found to be increasing with active layer thickness. The FWHM of far-field intensity shows a vertical divergence of 26 and showed a minor variation with the active layer thickness. Finally, it is inferred from our analysis that confinement of the near-field was strongly influenced by the mole fraction and the active layer thickness while the far-field was weakly influenced.

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Section: Mathematical Analysismentioning

confidence: 99%

“…Therefore, spatial distribution of the optical field is just associated with the transverse mode along the Y direction which is solved from the wave equation [6]:…”

Section: Mathematical Analysismentioning

confidence: 99%

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Analysis of near- and far-field intensities in ZnO based heterostructure waveguides

Bhole

Samuel

Patil

2008

Journal of Modern Optics

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“…However, ZnSe has low thermal conductivity, poor thermal stability and large ohmic contact resistances. The recent developments in the field of GaNbased light emitting devices have stimulated several experimental and theoretical studies on GaN/AlGaN heterostructures [7].…”

Section: Introductionmentioning

confidence: 99%

ANALYSIS OF WAVE FUNCTION, ENERGY AND TRANSMISSION COEFFICIENTS IN GaN/ALGaN SUPERLATTICE NANOSTRUCTURES

Talele¹,

Patil²

2008

PIER

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Abstract-Analysis of wave function intensity, eigen energy and transmission coefficients in GaN/AlGaN superlattice nanostructure has been carried out using Transfer Matrix Method (TMM). The effect of change in Aluminum mole fraction in Al x Ga 1−x N barrier region has been included through variable effective mass in the Schrödinger time independent equation. The behaviour of wave function intensity has been studied for superlattice structure by changing the barrier width. The effect of smaller barrier width on wave function intensity in case of superlattice is clearly observed due to interaction of wave functions in the adjacent wells and it provides a new insight in the nature of interacting wave functions for thin barriers in GaN/AlGaN superlattice structures. The barrier widths have been optimized for the varying number of wells leading to better quantum confinement. The iterative method (Secant Method) is used to determine value of electron energy E. The number of iterations need to converge the value of E has been simulated. Transmission coefficients have been determined as a function of energy E considering tunneling effect for three well structures using TMM. Analysis has been extended to show surface image of wave function intensity for 5 and 6 wells.

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“…Recent work on the fabrication of ZnO based double heterostructure waveguide and the possibility of hybrid MgZnO/AlGaN heterojunction shows the immense potential of ZnO based devices in future (Vispute et al 1998). To improve the effectiveness of light emitting devices, double heterostructure is used which confines more number of electrons and holes in the active layer resulting in enhancement of the recombination process (Bhole et al 2008;Samuel et al 2006). Therefore, heterostructure needs the cladding heterolayers of increased wide band gap along with nearly the same lattice constant of active layer so that the interface dislocations can be minimized.…”

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confidence: 99%

Structural, optical and electrical properties of post annealed Mg doped ZnO films for optoelectronics applications

2009

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Mg x Zn 1−x O films with 0.15 mole composition of Magnesium were successfully deposited by the spin coating sol-gel method. Zinc acetate dihydrate and Magnesium acetate were used as starting precursors to prepare the solution in ethanol solvent. The MgZnO films were deposited on microscopic glass substrates and post annealed at three different temperatures. X-ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and UV-VIS Spectrophotometer were used to characterize the deposited films for studying structural and optical properties. Energy dispersive analysis by X-ray (EDAX) was used to determine incorporation of Mg content in ZnO films. XRD spectrum reveals that, the deposited Mg doped ZnO films were polycrystalline in nature. The intensity of c-axis in the XRD spectrum goes on decreasing as Mg composition slightly increasing corresponding to increase in annealing temperature. EDAX spectra clearly showed the incorporation of Mg into the ZnO films. Semiconductor characterization system was used for the I-V characterization of MgZnO films. I-V characteristics show decrease in current as increase in the biased voltage. Optical band gap of MgZnO films was found to be increased from 3.2 to 3.38 eV as estimated from the absorption coefficients.

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Mode confinement and near field intensity analysis in a GaN-based blue–green laser diode

Cited by 17 publications

References 17 publications

Analysis of near- and far-field intensities in ZnO based heterostructure waveguides

Analysis of near- and far-field intensities in ZnO based heterostructure waveguides

ANALYSIS OF WAVE FUNCTION, ENERGY AND TRANSMISSION COEFFICIENTS IN GaN/ALGaN SUPERLATTICE NANOSTRUCTURES

Structural, optical and electrical properties of post annealed Mg doped ZnO films for optoelectronics applications

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