Model and Characterization of ${\rm VO}_{2}$ Thin-Film Switching Devices

Jordan, Tyler S.; Scott, Sean; Leonhardt, Darin; Custer, Joyce O.; Rodenbeck, Christopher T.; Wolfley, Steve; Nordquist, Christopher

doi:10.1109/ted.2014.2299549

Cited by 16 publications

(6 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Investigations of few-micron-sized thin film VO 2 two terminal devices have widely reported that the observed steep decrease of resistance at a critical current or voltage is related to a field-induced metal-insulator transition, [126][127][128][129][130][131][132][133]. However, recent work, [134][135][136][137][138][139][140][141], has found the switching to be induced by Joule heating rather than directly by the applied electric field.…”

Section: Switching Of Vo 2 2-terminal Devicesmentioning

confidence: 99%

Atomic layer deposition of vanadium oxides: process and application review

Prasadam

Bahlawane

Mattelaer

et al. 2019

Materials Today Chemistry

View full text Add to dashboard Cite

Atomic Layer Deposition (ALD) is a method of choice for the growth of highly conformal thin films with accurately controlled thickness on planar and nanostructured surfaces. These advantages make it pivotal for emerging nanotechnology applications. This review sheds light on the current developments on the ALD of vanadium oxide, which, with proper postdeposition treatment yields a variety of functional and smart oxide phases. The application of vanadium oxide coatings in electrochemical energy storage, microelectronics and smart windows are emphasized.

show abstract

Section: Switching Of Vo 2 2-terminal Devicesmentioning

confidence: 99%

Atomic layer deposition of vanadium oxides: process and application review

Prasadam

Bahlawane

Mattelaer

et al. 2019

Materials Today Chemistry

View full text Add to dashboard Cite

show abstract

“…However, when the dissipated power in this current reaches a sufficient level to locally raise the temperature above the point of phase transition, the switch body develops metallic regions, which then rapidly develop into a thin filament of metallic VO 2 between the switch contacts, latching the device in the on state. This behavior was first investigated by Zhao et al 6 , and later examined by Jordan et al 7 . The onset of latching is dependent on the electric field, and so switches with smaller gaps between contacts latch at lower powers compared to those with larger gaps.…”

Section: High Power Latchingmentioning

confidence: 90%

Vanadium dioxide phase change switches

et al. 2015

View full text Add to dashboard Cite

The thermally driven metal insulator transition in vanadium dioxide (VO 2 ) is used to create a low loss millimeter wave switch which operates up to and beyond W-band frequencies. We have built RF switches using vanadium dioxide thin films fabricated within a section of inverted transmission line with integrated on chip heaters to provide local thermal control. On heating the films above the metal insulator transition we obtain record low switch insertion loss of 0.13 dB at 50 GHz and 0.5 dB at 110 GHz. The switch cut-off frequency is high, fc ~ 45 THz, due to the low on state resistance and off state capacitance. We have investigated the device physics of these switches including self-latching of the devices under high RF powers, and demonstrated their integration with silicon germanium RF circuits where the switch heater current sources and control logic are also integrated into the same silicon germanium circuit.

show abstract

“…The behavior of the reflection is due to a change in the conditions for the interference of the reflected waves during MIT. Also in many articles [31][32][33][34][35][36] of an applied nature, an experimental and theoretical study of the microwave properties of VO 2 with MIT is carried out. So scattering parameters, including reflection, attenuation as a function of frequency and temperature, the dependence of these quantities on the phase state of VO 2 was established [32][33][34][35][36].…”

Section: Figmentioning

confidence: 99%

The interaction of electromagnetic waves with VO2 nanosized spheres and films in optical and extremely high frequency range.

Коледов¹,

Шавров²,

Shahmirzadi³

et al. 2018

JRE

View full text Add to dashboard Cite

Abstract. Recently the interaction effects of electromagnetic waves (EMW) with metallic nanoparticles and holes in nanosized films, called nano-antennas (NAs)attract great interest because of prospective applications in sensors technology. The conventional NAs and nanoparticles have fixed functionality, therefore the tunability of these structures are desired. One of the conventional method to obtain tunability is exploiting phase transition (PT) materials. Vanadium dioxide (VO 2 ) is known as a PT material and its complex dielectric constant are varied by temperature due to structural transformation, accompanying metal-insulator transition (MIT). This material is an insulator at room temperature (RT) and becomes metal above a critical temperature (T c =340 K). Hence, this material has emerged new applications in various fields. In this paper, VO 2 film on glass substrate were prepared and investigated in extremely high frequency (EHF) range (27-37 GHz). Then submicron holes arrays were formed on VO 2 films and their optical Raman spectra were studied.The special attention is paid on temperature dependence of the properties of films, holes and spheres. The study of EHF response of the nanosized VO 2 films reveals strong anomalies in the temperature range of metal-insulator transition. The RADIOELEKTRONIKI), ISSN 1684-1719, N2, 2018 2 submicron holes and arrays show strong change of the Raman spectra at the wavelength 530 nm due to heating by laser beam. Eventually, the optical properties of the homogeneous nonmagnetic VO 2 nanospheres embedded in the air are studied theoretically. The size effects on the optical properties of the VO 2 nanosphere are investigated and presented. In VO 2 nanosphere, converting into the metallic phase by heating leads to formation of a localized surface plasmon resonance (LSPR) which red shifts slightly by increasing dimension. The increment in the dimension of nanosphere in insulator case, results in the appearance of a peak in the visible wavelength most probably due to the excitation of combined electromagnetic modes. JOURNAL OF RADIO ELECTRONICS (ZHURNALThe optical spectra of VO 2 nanoparticle are much broader than that of silver nanosphere, which its associated localized electric field in form of dipolar mode is more intense than in VO 2 case. However, the LSPR of VO 2 can be thermally switched, making this material peculiar for recent advanced applications.

show abstract

Model and Characterization of ${\rm VO}_{2}$ Thin-Film Switching Devices

Cited by 16 publications

References 16 publications

Atomic layer deposition of vanadium oxides: process and application review

Atomic layer deposition of vanadium oxides: process and application review

Vanadium dioxide phase change switches

The interaction of electromagnetic waves with VO2 nanosized spheres and films in optical and extremely high frequency range.

Contact Info

Product

Resources

About