Model-Based Ionized-PVD-Source Scaling and Performance: Hardware-Feasibility Study

Brčka, Jozef

doi:10.1109/tps.2007.896759

Cited by 2 publications

(5 citation statements)

References 27 publications

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“…Contrary to configurations published by other researchers [9][10][11][12][13], we are using an external antenna [6,14] to couple 13.56 MHz RF generator to the plasma. This antenna generates on-axis peaked RF power density distribution with maximum up to 30 W cm −2 [6].…”

Section: Icp With Metallic Bafflementioning

confidence: 99%

“…This antenna generates on-axis peaked RF power density distribution with maximum up to 30 W cm −2 [6]. The RF magnetic field is strongly compressed when passing through slots of the deposition baffle to couple to the plasma.…”

Section: Icp With Metallic Bafflementioning

confidence: 99%

“…Nevertheless, of high opacity to deposition, this type of slot structure had tendency to fail (see Section 3.4 below) due to the disproportional heat load on individual slots as we found out later by heat transfer simulation and experimental observation. The investigations of more specific slots configurations were discussed yet in [6,7].…”

Section: Shielding Propertiesmentioning

confidence: 99%

“…Effective copper ionization occurs in a central area of the processing chamber and above the substrate [6]. The copper ions diffuse towards the substrate surface and walls and are accelerated by sheath voltage to the substrate surface.…”

Section: Reduction Of Capacitivementioning

confidence: 99%

“…The fundamentals of IPVD technology have been described in publications elsewhere, for instance [1][2][3][4][5]. In this paper, we will focus on the physics and engineering aspects of an RF transparent baffle but opaque to deposition in experimental IPVD system [6,7] with an external ICP antenna. In Section 2, we will describe basic properties of the ICP with deposition baffle (DB).…”

Section: Introductionmentioning

confidence: 99%

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Coupling and Shielding Properties of the Baffle in ICP System

Brčka

Robison²

2011

Modelling and Simulation in Engineering

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This contribution is dealing with experimental and computational evaluation of the deposition baffle that is transparent to radio frequency (RF) magnetic fields generated by an external antenna in an inductively coupled plasma (ICP) source but opaque to the deposition of the metal onto a dielectric wall in ionized physical vapor deposition (IPVD) system. Various engineering aspects related to the deposition baffle are discussed. Among the many requirements focus is on specific structure of the slots and analysis to minimize deposition on the baffle (we used a string model for simulating the profile evolution) and deposition through the DB on dielectric components of the ICP source. Transparency of the baffle to RF magnetic fields is computed using a three-dimensional (3D) electromagnetic field solver. A simple two-dimensional sheath model is used to understand plasma interactions with the DB slot structure. Performance and possible failure of device are briefly discussed.

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Section: Icp With Metallic Bafflementioning

confidence: 99%

Section: Icp With Metallic Bafflementioning

confidence: 99%

Section: Shielding Propertiesmentioning

confidence: 99%

Section: Reduction Of Capacitivementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Coupling and Shielding Properties of the Baffle in ICP System

Brčka

Robison²

2011

Modelling and Simulation in Engineering

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Design of plasma strip chamber for uniform gas supply with fluid flow simulation

Jang,

Jo,

Hong

2024

Journal of Vacuum Science &Amp; Technology B

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Within the domain of semiconductor fabrication, which entails progressively complex patterning steps, the significance of plasma stripping processes, particularly to achieve the effective stripping of photoresist (PR) without damaging the underlying substrates via uniform gas distribution across 300 mm wafers, cannot be overstated. The efficacy of plasma stripping is influenced by the design of the components of the process chamber, which is critical for advancing semiconductor manufacturing technologies. In this study, we elucidated the influence of the design of a process chamber, particularly the showerhead nozzle angles, on the plasma chemical reactions of radicals emanating from conventional PR equipment using computational fluid dynamics simulations. We assessed the impact of the showerhead design, which incorporated divergent or angled gas supply nozzles, on the distribution of the supply gas across the wafer within the process chamber. Five distinct angles of showerhead nozzles were investigated, and the uniformity of the oxygen mass fractions was optimized for nozzle angles of 45° and 60°. Additionally, the factors contributing to the low uniformity in a showerhead design were identified and design components were modified, resulting in a 16% improvement in uniformity. This study delineated the relationship between the nozzle position, mass fraction, and flow streamlines, thereby establishing the critical role of equipment design for enhancing the plasma stripping process. Furthermore, this principle transcends the realm of stripping equipment design; it is anticipated that incorporating flow dynamics simulations for designing process components will enhance the overall process performance.

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Model-Based Ionized-PVD-Source Scaling and Performance: Hardware-Feasibility Study

Cited by 2 publications

References 27 publications

Coupling and Shielding Properties of the Baffle in ICP System

Coupling and Shielding Properties of the Baffle in ICP System

Design of plasma strip chamber for uniform gas supply with fluid flow simulation

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