Model for bulk effects on Si interstitial diffusivity in silicon

Griffin, P.B.; Ahn, S. T.; Tiller, W. A.; Plummer, J.D.

doi:10.1063/1.98996

Cited by 45 publications

(15 citation statements)

References 7 publications

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“…Also, the diffusion range of interstitials in Si superlattices grown by chemical-vapor deposition has been shown to be much larger than in MBE-grown Si. 27 This discrepancy between the various experiments has been ascribed to the fact that the migration of self-interstitials is perturbed by the presence of interstitial traps in Si, 18,19 and presumably C is the dominant impurity as demonstrated above.…”

Section: B Discussionmentioning

confidence: 90%

“…Separate determinations of D I and ͓I*͔, 15 on the other hand, have resulted in an enormous spread in these parameters. As suggested by Griffin et al 18 and by Cowern 19 the discrepancies in the values for D I could be explained on the basis of trap-limited interstitial diffusion; however, no consensus has been reached until now about the nature of these intrinsic traps in silicon.…”

Section: Introductionmentioning

confidence: 91%

“…The implantation and annealing conditions had been chosen with the help of the process simulator PROPHET 49 to produce B profiles that were uniform ͑within 10%͒ over a distance of at least 300 nm from the surface. The implanted 10 B doses were 6ϫ10 13 /cm 2 , and 2, 3, 4, and 6ϫ10 14 /cm 2 , producing boron concentrations ͓B͔ of 1, 3, 5, 7ϫ10 18 , and 1ϫ10 19 /cm 3 , respectively, in the uniform surface region after the diffusion anneal. Spreading resistance measurements were used to verify the quoted B concentrations and depth distributions.…”

Section: A Sample Preparationmentioning

confidence: 99%

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Stolk¹,

Gossmann²,

Eaglesham³

et al. 1997

Journal of Applied Physics

596

210

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Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy Appl. Phys. Lett. 101, 042113 (2012) Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation Appl. Phys. Lett. 101, 021905 (2012) Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces Appl. Phys. Lett. 100, 171915 (2012) Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials Implanted B and P dopants in Si exhibit transient enhanced diffusion ͑TED͒ during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy ͑MBE͒. Damage from nonamorphizing Si implants at doses ranging from 5ϫ10 12 to 1ϫ10 14 /cm 2 evolves into a distribution of ͕311͖ interstitial agglomerates during the initial annealing stages at 670-815°C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of ͕311͖ defects during Ostwald ripening with an activation energy of 3.8Ϯ0.2 eV. The excess interstitials drive substitutional B into electrically inactive, metastable clusters of presumably two or three B atoms at concentrations below the solid solubility, thus explaining the generally observed immobile B peak during TED of ion-implanted B. Injected interstitials undergo retarded diffusion in the MBE-grown Si with an effective migration energy of ϳ3.5 eV, which arises from trapping at substitutional C. The concept of trap-limited diffusion provides a stepping stone for understanding the enormous disparity among published values for the interstitial diffusivity in Si. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ϳ10 19 /cm 3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation. The present insights have been implemented into a process simulator, allowing for a significant improvement of the predictive modeling of TED.

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Section: B Discussionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 91%

Section: A Sample Preparationmentioning

confidence: 99%

See 1 more Smart Citation

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Stolk¹,

Gossmann²,

Eaglesham³

et al. 1997

Journal of Applied Physics

596

210

View full text Add to dashboard Cite

show abstract

“…Notice that all these values are within those reported by other authors. For example, Taniguchi et al [10] performing an experiment on thinned silicon wafers, but using conventional thermal oxidation at 1100 C and with a SiO 2 /Si 3 N 4 on top measured: D I 1X8 Â 10 À9 cm 2 as 1100 C Y k S 7X1 Â 10 À7 cmas 1100 C Y C eq I 6X45 Â 10 16 cm À3 1100 C X According to Griffin et al [23] who tried to observe the effects that bulk traps have on the measured values of D I , our measurements should correspond to effective values. However, if this were the case, we should have observed different values for D I according to the kind of material, since CZ silicon would have more defects than FZ silicon wafers.…”

Section: Analysis Of Resultsmentioning

confidence: 99%

Silicon Self-Interstitial Kinetics Study by Means of Thin Membranes under Thermal Oxinitridation

Carrillo-López

Morales‐Acevedo²

1999

phys. stat. sol. (a)

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We have made a study for determining the silicon self‐interstitial diffusivity, their equilibrium concentration and their recombination velocity at SiO2/Si and Si3N4/Si interfaces in float zone and Czochralski silicon wafers. The experiments were based on monitoring the stacking fault growth/reduction kinetics at the front surface of a silicon membrane with a SiO2 or Si3N4 thin layer on top, under constant interstitial generation, by means of an oxinitridation process, at the other side of the membrane. We show that under these experimental conditions, the analysis and interpretation of the results is direct because the transport equation can be solved in a simple manner. We have achieved a very good agreement between the experimental results and the calculations made with the model and we have been able to determine values for the interstitial diffusivity, the equilibrium concentration and the recombination velocity at the SiO2/Si and Si3N4/Si interfaces.

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“…15,16 The decay has been attributed to trap-limited indiffusion of self-interstitials into the Si crystal. 17,18 The nature of these traps is not known. Excess vacancies in MBEgrown layers and background C doping have been discussed as possible candidates for interstitial trapping.…”

mentioning

confidence: 99%