Model for degradation of band gap photo-luminescence in GaAs

Guidotti, Daniel; Hasan, E.; Hovel, H. J.; Albert, Marc K.

doi:10.1007/bf02457514

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Optical Properties Of Unpassivated Nanowires1

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2011

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Cited by 3 publications

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“…16 Furthermore oxidation of the surface and other inhomogeneities on the crystal facets generally can lead to non-radiative recombination and a degradation of the photoluminescence signal. 17,18 An optically inactive layer at the semiconductor surface can be the consequence. 19 Such phenomena will be most pronounced for thin nanowires where the surface to volume ratio increases.…”

Section: Optical Properties Of Unpassivated Nanowiresmentioning

confidence: 99%

Nanowire based heterostructures: fundamental properties and applications

Heiß

Colombo

Morral

2011

Nanoepitaxy: Materials and Devices III

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In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial epitaxial passivation shells. The growth of radial p-i-n junctions in GaAs nanowires is discussed. Characterization of such nanowires on a single nanowire level is presented. The fundamental limits of single nanowire optical device performance are obtained by numerical simulation and discussed.

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Section: Optical Properties Of Unpassivated Nanowiresmentioning

confidence: 99%