Model for NL10 thermal donors formed in annealed oxygen-rich silicon crystals

Hara, Akito; Aoki, Masaki; Koizuka, Masaaki; Fukuda, Tetsuo

doi:10.1063/1.356187

Cited by 30 publications

(23 citation statements)

References 27 publications

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“…The spectra were measured at 10 K for three typical magnetic field directions ing principal values of the g-tensor: g 11 [110]). These values are very close to those for Si-NL10 EPR spectra in silicon [13,14].…”

supporting

confidence: 85%

“…The centers responsible for the Si-NL10 EPR spectra are known to be formed in Cz-Si crystals upon annealing in the temperature range of 450 to 550 C [13,14]. Recently, the defects which give rise to the Si-NL10 spectra were linked to those responsible for the electronic infrared absorption lines at energies below %300 cm ± ±1 and known as shallow thermal donors (STDs) [15].…”

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confidence: 99%

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EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon

Маркевич

Mchedlidze

Suezawa

et al. 1998

phys. stat. sol. (b)

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An electron paramagnetic resonance (EPR) study of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1±D3) were observed earlier by means of infrared absorption measurements in hydrogenated Czochralski-grown Si (Cz-Si) crystals after irradiation with fast electrons and subsequent annealing in the temperature range of 300 to 550 C. An EPR signal with isotropic g-factor of 1.9987, labeled TU1, has been found in hydrogenated Cz-Si crystals which were irradiated and annealed at 300 to 350 C. It was shown that the TU1 signal is related to the shallow donor state of the D1 center. Annealing at temperatures higher than 350 C resulted in transformation of the D1 to the D2 centers. This led to the transformation of the TU1 spectrum to another one with S 1/2 and anisotropic g-tensor, the principal values of which were found to be very close to those for the Si-NL10 EPR spectra in silicon. The observed EPR spectra are compared with the Si-NL10 ones and possible atomic structures, and formation mechanisms of the defects which give rise to these spectra are discussed.

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confidence: 85%

mentioning

confidence: 99%

EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon

Маркевич

Mchedlidze

Suezawa

et al. 1998

phys. stat. sol. (b)

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“…[1][2][3][4][5][6][7] They are manifested by several sharp bands in the far-infrared spectra and by their contribution to electron concentration. [1][2][3][4][5][6][7] They are manifested by several sharp bands in the far-infrared spectra and by their contribution to electron concentration.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] They are manifested by several sharp bands in the far-infrared spectra and by their contribution to electron concentration. 1,[3][4][5][6] The middle-temperature range is also remarkable for production 8 of the so-called new thermal donors ͑NTDs͒. 2,3,7 On the other hand, STDs observed in the as-grown state or generated in the middle-temperature range ͑600-700°C͒ are certainly some kind of nitrogen-oxygen complex, since they are found only in the presence of both impurities.…”

Section: Introductionmentioning

confidence: 99%

Shallow thermal donors in nitrogen-doped silicon

Voronkov

Porrini

Collareta

et al. 2001

Journal of Applied Physics

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Articles you may be interested inEffect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon Silicon crystals doped with nitrogen from the melt contain shallow thermal donors ͑STDs͒ detected both optically and electrically. Annealing samples at 600 and 650°C results in a saturated STD concentration that depends on the nitrogen concentration approximately by a square-root law. This indicates the involvement of only one nitrogen atom in every STD species. The model of STDs consistent with the present data is the NO m complex of a nitrogen interstitial and m oxygen atoms; the concentration of every STD species reaches the equilibrium value during annealing. The temperature dependence of the equilibrium reaction constant allows us to estimate the average number of oxygen atoms m of the STD complexes as 3.

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“…7 strong decrease in their concentrations in this temperature range. 62, 63 Fujita et al 61 found also LVM frequencies for the O-N-O configuration of NO 2 at 970, 751, and 658 cm −1 . 4͒.…”

Section: Search For Vibrational Modes Of N-o Sd Complexesmentioning

confidence: 97%

Thermal stability and vibrational spectroscopy of N–O shallow donor centers in silicon

Alt¹,

Wagner²

2009

Journal of Applied Physics

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Thermal stability and breakdown strength of carbon-doped SiO 2 :F films prepared by plasma-enhanced chemical vapor deposition method N-O-related shallow donors in nitrogen-doped Czochralski silicon have been studied by infrared spectroscopy. Quasithermal equilibrium states were established by long-term thermal annealing in the temperature range from 600 to 1000°C. By quantitative analysis of the 1s → 2p Ϯ far-infrared electronic transitions between 230 and 250 cm −1 , it is found that the formation and decay characteristics of these centers do not correspond to theoretical predictions. All complexes investigated show a monotonic decrease for annealing temperatures above 600°C. In particular, the dominant NO 2 complex exhibits a pronounced biexponential decay behavior. Based on the characteristic thermal fingerprint of the individual shallow donor species, associated local vibrational modes in the midinfrared were investigated. Two bands at 1070 and 860 cm −1 can be assigned to NO 2 , the center with the highest concentration variation in the relevant temperature range between 600 and 800°C. These frequencies match favorably with recent calculations for this complex in the symmetrical O-N-O configuration.

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Model for NL10 thermal donors formed in annealed oxygen-rich silicon crystals

Cited by 30 publications

References 27 publications

EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon

EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon

Shallow thermal donors in nitrogen-doped silicon

Thermal stability and vibrational spectroscopy of N–O shallow donor centers in silicon

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