Shallow thermal donors in nitrogen-doped silicon

Abstract

Articles you may be interested inEffect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon Silicon crystals doped with nitrogen from the melt contain shallow thermal donors ͑STDs͒ detected both optically and electrically. Annealing samples at 600 and 650°C results in a saturated STD concentration that depends on the nitrogen concentration approximately by a square-root law. This indicates the involvement of only one nitrogen atom in every STD species. The model of STDs consistent with the present data is the NO m complex of a nitrogen interstitial and m oxygen atoms; the concentration of every STD species reaches the equilibrium value during annealing. The temperature dependence of the equilibrium reaction constant allows us to estimate the average number of oxygen atoms m of the STD complexes as 3.

Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

“…The equilibrium constants defining the equilibria of reactions (7) and (8), K N2N N 2 and K v2N vN , are adopted from Voronkov and Falster [46]. The apparent segregation coefficient of nitrogen determining its segregation between a crystal and a melt is adopted from Yatsurugi et al [43,51,52]. There is a significant uncertainty in the parameters defining the thermodynamics of the reactions and the properties of all species involved in the CZ defect dynamics.…”

The effect of nitrogen on void formation in Czochralski silicon crystals

“…The N 1 O m complexes are formed by annealing at around 650 1C and act as shallow thermal donors [18]; their concentration is fast decreasing upon raising T. Some nitrogen-oxygen complexes (most likely, N 2 O m ) are manifested in IR spectra of as-grown CZ material [19][20][21]. By a rapid thermal annealing [20] in a range from 700 to 1200 1C, the N 2 -related band is enhanced while the nitrogen-oxygen bands are suppressed.…”

Nitrogen-doped Czochralski silicon treated in rapid thermal process

“…The other is absorption bands of electronic nature in the far infrared range between 190 and 270 cm −1 [42]. Many researchers have studied the conventional and RTP annealing behaviors of the LVM lines of nitrogen and oxygen complexes [39,40,[43][44][45][46], but those of the electronic transition IR absorption lines of nitrogen and oxygen complexes are still not clear. To address this issue, we have investigated the RTP annealing behavior of the electronic transition IR absorption lines of nitrogen and oxygen complexes by low temperature (10 K) FTIR measurement.…”