The effect of nitrogen on void formation in Czochralski silicon crystals

Voronkov, V. V.; Falster, R.

doi:10.1016/j.jcrysgro.2004.10.036

Cited by 37 publications

(44 citation statements)

References 19 publications

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“…18,19 This population of VO that coexists with the thermal vacancies, represents an effective sink for vacancies lowering the number of vacancies that can be captured by hydrogen to form VH 4 . The apparent vacancy formation energy derived from the quenching experiments is thus strongly influenced by the formation of VO.…”

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confidence: 99%

Impact of germanium on vacancy clustering in germanium-doped silicon

Chroneos

Grimes

Bracht

2009

Journal of Applied Physics

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The formation energy and thermal equilibrium concentration of vacancies in Ge doped Czochralski-grown Si are studied by quenching of samples annealed at temperatures between 1200 and 1350°C for 1 h under hydrogen atmosphere. After quenching, the majority of the formed vacancy and hydrogen containing point defect clusters are transformed into VH 4 defects by a 1 h anneal at 450°C. Measuring the amplitude of the vibrational band of VH 4 at 2223 cm −1 as function of the quenching temperature allows estimating the vacancy formation energy. An apparent formation energy of about 2 eV is obtained for Ge doping between 7 ϫ 10 17 and 6.5ϫ 10 20 cm −3 which is significantly lower than the 4 eV obtained for high purity Si. In the whole quenching temperature window, the vacancy thermal equilibrium concentration is significantly higher than in Si without Ge doping. It is shown that this lower apparent formation energy can be explained by the presence of vacancy traps. © 2010 American Institute of Physics. ͓doi:10.1063/1.3449080͔Intrinsic point defects in semiconductors play an important role in a wide range of processes ranging from Czochralski ͑Cz͒ crystal growth to device processing. In order to control and to optimize these processes, it is crucial to have a quantitative knowledge of the intrinsic point defect properties.In the early days already quenching from high temperatures has been explored to study the intrinsic point defects in Si. It was indeed observed that by quenching from high temperatures, donors are formed which change the resistivity of the Si material and can easily be detected using resistivity and Hall measurements. Unfortunately, it soon turned out that in most cases these donors were due to iron contamination either grown-in during crystal growth and activated by the quenching treatment or diffusing in from the surface of the samples during the high temperature treatment. 1 Often the concentration of iron was so high that it was the main cause of the observed resistivity changes. Only in few careful studies also donors were observed that could not be related to metallic impurities 2,3 but even in these cases the relation with the intrinsic point defects was not clear.For those reasons, beginning of the 1990s a new quenching technique was developed at Tohoku University which is based on performing the high temperature anneal and the quenching step itself with the sample kept under hydrogen ambient. [4][5][6][7] The originality of this approach is to detect vacancies as vacancy-hydrogen complexes. Isolated vacancies can indeed not exists after quenching because of the very small vacancy migration energy. Further more, ab initio calculations reveal that the binding energy of the various vacancy-hydrogen complexes that can be formed is larger than that of vacancy-only clusters with a similar number of vacancies. 8 Due to this, vacancies will preferentially cluster with hydrogen atoms/molecules during the quench and during subsequent low temperature anneals. After the quench from high temperature, an annea...

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confidence: 99%

Impact of germanium on vacancy clustering in germanium-doped silicon

Chroneos

Grimes

Bracht

2009

Journal of Applied Physics

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“…The microdefect distributions in CZ crystals are affected by defect dynamics at fairly higher temperatures, at which nitrogen predominantly exists as N, N 2 , and vN; hence, presence of any other species containing nitrogen can be ignored [46]. The species N and N 2 are assumed to exist in the interstitial form in silicon and vN can be viewed to exist in the substitutional form.…”

Section: Reactions In Growing Cz Crystalsmentioning

confidence: 99%

“…The parameters proposed by Kulkarni [42] for the simulation of the CZ defect dynamics in the presence of oxygen are used in this study. The equilibrium constants defining the equilibria of reactions (7) and (8), K N2N N 2 and K v2N vN , are adopted from Voronkov and Falster [46]. The apparent segregation coefficient of nitrogen determining its segregation between a crystal and a melt is adopted from Yatsurugi et al [43,51,52].…”

Section: The Governing Equationsmentioning

confidence: 99%

“…Various studies showed that the microdefect distribution in CZ crystals can be influenced in the presence of nitrogen, in general, and the size of voids can be reduced, in particular [43][44][45][46]. In addition, various mechanisms to describe the effect of nitrogen on CZ defect dynamics were proposed [43,45,46]. Voronkov and Falster [46] quantified the effect of nitrogen on void distribution in an isolated element of a growing CZ crystal.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, various mechanisms to describe the effect of nitrogen on CZ defect dynamics were proposed [43,45,46]. Voronkov and Falster [46] quantified the effect of nitrogen on void distribution in an isolated element of a growing CZ crystal. An accurate model for the prediction of the effect of nitrogen on the CZ defect dynamics, however, must account for the diffusion of mobile reacting species in a growing crystal.…”

Section: Introductionmentioning

confidence: 99%

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Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

Kulkarni

2008

Journal of Crystal Growth

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Many crystallographic imperfections termed microdefects form in silicon crystals during their Czochralski growth. These are the aggregates of vacancies, of self-interstitials, or of oxygen (silicon dioxide). The distribution of microdefects can be strongly influenced and controlled by the addition of impurities such as nitrogen to the crystal. A model describing the Czochralski defect dynamics in the presence of nitrogen and oxygen is proposed and solved. The reactions between vacancies and self-interstitials, nitrogen monomers and dimers, nitrogen and vacancies, and the reactions involving vacancies, oxygen, and complexes of vacancies and oxygen are incorporated, along with the formation of various microdefects. All microdefects are approximated as spherical clusters. The formation of all clusters is described by the classical nucleation theory. The clusters, once formed, grow by diffusion-limited kinetics. The microdefect distributions in Czochralski crystals growing under steady state as well as unsteady state are discussed. r

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Void properties in silicon heavily doped with arsenic and phosphorus

Voronkov

Falster

Porrini

et al. 2012

Physica Status Solidi (a)

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Grown‐in voids in silicon are strongly affected by donor dopants. For As‐doped wafers, voids (revealed as light‐scattering surface defects observed after cleaning) show a pronounced increase in their density up to [As] = 1.7 × 1019 cm−3, but at higher [As] the void density drops sharply. A similar behaviour was found for P‐doped wafers where a sharp drop occurs at [P] > 2.9 × 1019 cm−3. Such a dependence is accounted for by an effect of minor impurity species: vacancy‐impurity complexes (trapped vacancies) and interstitial impurity atoms (trapped self‐interstitials). The total incorporated concentration of the vacancy species is first incremented due to the trapped vacancies. At higher impurity concentrations, it is reduced due to an increased contribution of negatively charged interstitial impurity species. The simulated dependence of void density and size on the impurity concentration is well consistent with the experimental data.

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The effect of nitrogen on void formation in Czochralski silicon crystals

Cited by 37 publications

References 19 publications

Impact of germanium on vacancy clustering in germanium-doped silicon

Impact of germanium on vacancy clustering in germanium-doped silicon

Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

Void properties in silicon heavily doped with arsenic and phosphorus

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