“…In particular, Ganachaud et al [ 99 ] have pointed it out that whether or not taking the acoustic-phonon scattering into account would not cause an obvious variation in the secondary electron yield in their Monte Carlo simulations, but incorporating it into the simulation would result in a narrower secondary electron peak. On the other hand, it was shown that the omit of acoustic-phonon scattering results in a significant overestimation of secondary electron yield only for primary energies below 200 eV in a model sensitivity analysis of Monte Carlo simulation of SEM image contrast [ 108 ]. Figure 5.…”
Charging effect frequently occurs when characterizing nonconductive materials using electrons as probes and/or signals and can impede the acquisition of useful information about the material under investigation. It is not adequate to investigate it merely by experiments, but theoretical investigations, for which the Monte Carlo method is a suitable tool, are also necessary. In this paper we review Monte Carlo simulations and selected experiments, intending to provide general insight into the charging effects induced by electron beam irradiation. We will introduce categories of the charging effect, the theoretical framework that is adopted in Monte Carlo modeling of the charging effect and present some typical simulation results. At last, with the knowledge on charging effect imparted by the above contents, we will discuss the measures that can be used for minimizing it.
“…In particular, Ganachaud et al [ 99 ] have pointed it out that whether or not taking the acoustic-phonon scattering into account would not cause an obvious variation in the secondary electron yield in their Monte Carlo simulations, but incorporating it into the simulation would result in a narrower secondary electron peak. On the other hand, it was shown that the omit of acoustic-phonon scattering results in a significant overestimation of secondary electron yield only for primary energies below 200 eV in a model sensitivity analysis of Monte Carlo simulation of SEM image contrast [ 108 ]. Figure 5.…”
Charging effect frequently occurs when characterizing nonconductive materials using electrons as probes and/or signals and can impede the acquisition of useful information about the material under investigation. It is not adequate to investigate it merely by experiments, but theoretical investigations, for which the Monte Carlo method is a suitable tool, are also necessary. In this paper we review Monte Carlo simulations and selected experiments, intending to provide general insight into the charging effects induced by electron beam irradiation. We will introduce categories of the charging effect, the theoretical framework that is adopted in Monte Carlo modeling of the charging effect and present some typical simulation results. At last, with the knowledge on charging effect imparted by the above contents, we will discuss the measures that can be used for minimizing it.
“…Moreover, it is suggested that several metaheuristic approaches may be considered for better assessment of sensitivity [ 87 ] or Monte-Carlo simulations [ [8][8]] , [8][9]] ]. Following the study of Naik and Kirvan [ 90 ], this could provide better output, even for applications of feature selection.…”
“…Subsequently, the charge is moved parallel to its velocity vector over a random distance that is consistent with λ, and the scattering process is executed. 18,19 When considering the first Monte Carlo step after the generation of the particle, its quantum-mechanical state is a spherical wave and an isotropic distribution of velocity directions is assumed from which a random direction is selected.…”
Modelling the pattern formation process in photoresist materials for extreme ultraviolet (EUV) lithography in a stochastic and mechanistic manner, with molecular-scale resolution, should enable predicting the effect of variations of material parameters and process conditions, leading to insights into the ultimate resolution limits. In this work, we present the results of the first steps toward that goal. We describe the physics of the development with time of cascades of electrons and holes, created by the stochastic absorption of 92 eV photons, using a kinetic Monte Carlo model with molecular resolution. The thin film material is modelled assuming a cubic array of lattice sites, at a distance that is consistent with the molecular density of the photoresist material that is considered. The simulation of the cascading process is based on the experimental optical energy loss function, extended to include also excitations with momentum transfer. The method allows for including the Coulomb interactions between charges. In contrast to earlier work, within which the high-energy electrons move ballistically until scattering takes place, the trajectories are in our model formed by stochastically determined interconnected molecular sites. In future extensions of the model, this approach will facilitate including in a natural way a transition from delocalized electron transport at high energies to hopping transport of localized electrons at low energies. The simulations are used to study the sensitivity of the average number of degradations per absorbed photon and the average electron blur length on the rates of elastic scattering and of molecular degradation, and on the energy that is lost upon a molecular degradation process.
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