Modeling and analysis of cracked through silicon via (TSV) interconnections

Gerakis, Vasileios; Avdikou, Christina; Liolios, Alexandros; Hatzopoulos, A.A.

doi:10.1109/ddecs.2014.6868817

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Cited by 5 publications

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“…Origins can be electro migration (EM), soft breakdown (SBD) [6], material residuals and induced voids (see Fig. 2b) and cracks in 3D TSVs in chips [16].…”

Section: IImentioning

confidence: 99%

The influence of No Fault Found in analogue CMOS circuits

Wan

Kerkhoff

2014

19th Annual International Mixed-Signals, Sensors, and Systems Test Workshop Proceedings

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The most difficult fault category in electronic systems is the "No Fault Found" (NFF). It is considered to be the most costly fault category in, for instance, avionics. The relatively few papers in this area rarely deal with analogue integrated systems. In this paper a simple simulation model has been developed for a particular type of NFF, the intermittent resistive fault resulting from bad interconnections. Simulations have been carried out with respect to a CMOS operational amplifier under influence of NFFs, and the resulting behaviour under different fault conditions has been examined.

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“…Origins can be electro migration (EM), soft breakdown (SBD) [6], material residuals and induced voids (see Fig. 2b) and cracks in 3D TSVs in chips [16].…”

Section: IImentioning

confidence: 99%