Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor

Abstract

The growth of epitaxial Si on (100)-oriented Si wafers in a horizontal rapid thermal chemical vapor deposition (RTCVD) reactor has been investigated. Trichlorosilane was employed as a precursor diluted in H 2 carrier gas at 1 atm reactor pressure. The growth rates in dependence of the deposition uniformity, the input partial pressure of the precursor, and the fluid dynamics were analyzed by a three-dimensional numerical simulation. Good agreement between predicted and measured growth rates were found. Moreover, the experimental growth rates under mass transport limitation were discussed in terms of gas-phase supersaturation and its impact on the surface morphology. Finally, it is demonstrated that hydrodynamic effects in the RTCVD reactor influence strongly the Si growth in the delivery rate limited regime.

Nonempirical Design of Rapid Thermal Processing System

“…Semiconductor device manufacturing processes widely use rapid thermal processing (RTP) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] for obtaining both reasonable throughput and high quality. For the analysis and the optimization of the entire heat transport from the radiation heat source to the substrate in the RTP system, many researchers have studied the theoretical calculation models.…”

Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

“…The model can be extended to the chemical vapor deposition of silicon from rich mixtures of SiHCl 3 (as high as 30 per cent) and hydrogen in a horizontal reactor. 26) …”

Hydrodynamic behaviors of an internally circulating fluidized bed with wide-size-distribution particles for preparing polysilicon granules

“…The SiHCl 3 concentration c(SiHCl 3 ) in the reaction zone was 7.3-111.0 times higher than that in the heating zone when U R /U mf decreases from 1.95 to 0.97. When U R / U mf = 0.97-1.30, c(SiHCl 3 ) in the heating zone was only 0.18-0.94%, thus the silicon deposition in the heating wall could be neglected because the silicon deposition rate was proportional to c(SiHCl 3 ) as reported in the literature [21,22]. By optimizing the structure of ICFB, such as the height of draft tube, size of orifices and type of gas distributor, the undesired silicon deposition on the heating surfaces can be further suppressed [23].…”