The growth of epitaxial Si on (100)-oriented Si wafers in a horizontal rapid thermal chemical vapor deposition (RTCVD) reactor has been investigated. Trichlorosilane was employed as a precursor diluted in H 2 carrier gas at 1 atm reactor pressure. The growth rates in dependence of the deposition uniformity, the input partial pressure of the precursor, and the fluid dynamics were analyzed by a three-dimensional numerical simulation. Good agreement between predicted and measured growth rates were found. Moreover, the experimental growth rates under mass transport limitation were discussed in terms of gas-phase supersaturation and its impact on the surface morphology. Finally, it is demonstrated that hydrodynamic effects in the RTCVD reactor influence strongly the Si growth in the delivery rate limited regime.

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Heteroepitaxial thin film ZnS and ZnSe layers were grown on (100)-oriented GaAs substrates in the temperature range from 290 to 420°C with a H. dilutant. The growth studies were performed in a conventional vertical metallorganic vapor-phase reactor with a downstream inclined substrate holder. Numerical calculations were carried out to optimize growth rate homogeneity, flow patterns, and the input partial pressures of the limiting growth precursors. The surface morphology, the average surface roughness, and layer thickness distribution were evaluated by scanning electron microscopy and by profilometry analyses. The experimental results closely match the numerical data. Furthermore, the quality of layers were characterized by X-ray diffraction and photoluminescence methods to underline the correlation to the flow behavior of the gas mixture.

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