Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring

Cho, Jonghyun; Song, Eakhwan; Yoon, Kwan Han; Pak, Jun So; Kim, Joohee; Lee, Woojin; Song, Taigon; Kim, Kiyeong; Lee, Jun-Ho; Lee, Hyungdong; Park, Kunwoo; Yang, Seung-Taek; Suh, Min-Suk; Byun, Kwang-Yoo; Kim, Joungho

doi:10.1109/tcpmt.2010.2101892

Cited by 148 publications

(72 citation statements)

References 18 publications

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“…[5][6][7][8] Although good isolation results can be achieved with these strategies, the incurred area overhead makes them very expensive especially for advanced technology nodes. Therefore, a combined signal-ground TSV design and fabrication strategy is proposed to improve noise isolation.…”

Section: Potential Isolation Methods For Tsv-device Noise Coupling Ofmentioning

confidence: 99%

Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes

et al. 2015

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Although a through-silicon via (TSV) is widely used in three-dimensional integrated circuit systems, one of its major design challenges is noise coupling between TSVs and active devices. This paper investigates noise coupling between TSVs and active devices for 20/14-nm technology nodes. The effect of variations of structural parameters on noise coupling was examined using a three-dimensional full-wave electromagnetic field solver and its result was explained. Additionally, transient analysis on coupling noise was conducted with Synopsys TCAD. Furthermore, a combined strategy employing doped signal TSVs and ‘bare’ ground TSVs was proposed and compared with conventional signal/ground schemes. Demonstrated to improve noise isolation effectively, the proposed strategy is inherently advantageous to circuits of advanced technology nodes compared with other noise isolation schemes, for it demands no modification of the original circuit design, placement and routing.

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Section: Potential Isolation Methods For Tsv-device Noise Coupling Ofmentioning

confidence: 99%

Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes

et al. 2015

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“…The TSV test vehicle contains one TSV, one substrate contact, RDL and on-chip metal lines. The detailed structure of the test vehicle and the physical dimensions are listed in the previous paper [8].…”

Section: Spice Modeling Of Voltage-dependent Tsv Capacitancementioning

confidence: 99%

Nonlinear effects of TSV and harmonic generation

Cho

Kim

Pak

et al. 2012

2012 IEEE 62nd Electronic Components and Technology Conference

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The nonlinear effects of through-silicon via (TSV) is first demonstrated and analyzed in this paper. TSV constructs metal-insulator-semiconductor (MIS) structure, which generates depletion region depending on the TSV bias voltage. Due to the voltage-dependent capacitance of TSV, it shows nonlinear effects and harmonic generations both at the transmitted and the coupled signal. The SPICE-compatible TSV capacitance model is proposed and is used for circuit simulation, which demonstrates TSV nonlinearity. Also TSV nonlinearity is measured by TSV test vehicle, which is manufactured by Hynix Semiconductor Inc. using via-last TSV process.

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“…Many studies have been conducted to model and analyze TSVs by constructing equivalent circuit models [4][5][6][7][8][9][10][11][12][13]. In [4,5], an efficient modeling method for a TSV based on cylindrical modal basis functions has been studied and has demonstrated high accuracy, close to that of full-wave simulations.…”

Section: Introductionmentioning

confidence: 99%

“…An electrical TSV model is proposed and compared by 3D EM solver considering the semiconductor effects in [11]. Models for the coupling noise of TSV are proposed in [12]. An analytical model for TSV-TSV coupling capacitance is proposed in [13].…”

Section: Introductionmentioning

confidence: 99%

A Performance Analysis for Interconnections of 3D ICs with Frequency-Dependent TSV Model in S-parameter

Han¹,

Lim²,

Kim³

2014

JSTS:Journal of Semiconductor Technology and Science

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Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring

Cited by 148 publications

References 18 publications

Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes

Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes

Nonlinear effects of TSV and harmonic generation

A Performance Analysis for Interconnections of 3D ICs with Frequency-Dependent TSV Model in S-parameter

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