Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants

Huang, Long; Ku, Kai-Wei; Sheu, Yae‐Lin; Nieh, C. W.; Chen, C. H.; Chang, Hsin-Li; Wang, L. T.; Lee, T. L.; Wang, C. C.; Diaz, C.H.

doi:10.1007/978-3-211-72861-1_8

Simulation of Semiconductor Processes and Devices 2007

DOI: 10.1007/978-3-211-72861-1_8

|View full text |Cite

Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants

Long Huang

Kai-Wei Ku

Yae‐Lin Sheu

et al.

Abstract: A continuum model of phosphorus diffusion with germanium and carbon coimplant has been proposed and calibrated based on secondary ion mass spectroscopy (SIMS) profiles aiming at ultra shallow junction (USJ) formation in advanced CMOS technologies. The phosphorus diffusion behaviors are well captured by our model under various implant and annealing conditions, representing a significant step towards advanced n-type USJ formation technique using phosphorus and carbon coimplant for aggressively scaled CMOS techno… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Chang

Tsai

2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

The dose loss of phosphorus due to interface segregation in silicon-on-insulator (SOI) substrates was characterized by using sheet resistance. Bulk silicon and SOI wafers were implanted with phosphorus at a dose of 5×1014 cm−2, followed by annealing at 900 °C to produce phosphorus segregation at the SiO2–Si interface. The effectiveness of the mobility model for calculating sheet resistance and the reliability of parameters in interface segregation models were verified based on the sheet resistance data and the secondary ion mass spectrometry profiles of phosphorus in bulk silicon samples. The sheet resistance in SOI substrates was then simulated using the verified mobility model and interface segregation parameters. Simulation results indicate that the equilibrium segregation behavior at the interfaces in SOI samples is similar to that in bulk silicon samples. Moreover, the dose loss in SOI substrates is more significant than that in bulk silicon wafers owing to a larger interface area in the SOI substrates.

show abstract

Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Chang

Tsai

2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants

Cited by 1 publication

References 12 publications

Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Contact Info

Product

Resources

About