2022
DOI: 10.1016/j.mseb.2021.115574
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Modeling and optimization of CZTS kesterite solar cells using TiO2 as efficient electron transport layer

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Cited by 45 publications
(18 citation statements)
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“…Using this value, the EB CB is found to be 0.19 eV. Both values for EB CB create the same ideal spike-like barrier to prevent recombination at the interface and support high V oc in a device fabricated with this structure. , The high degree of similarity between both calculated and measured band bending, and subsequent EB VB , is also strong evidence that the measured Cu vacancies at the interfacial surface are not ubiquitous but, as expected, are scattered periodically throughout the film. This would also indicate that the antisites are even less common.…”
Section: Resultssupporting
confidence: 53%
See 1 more Smart Citation
“…Using this value, the EB CB is found to be 0.19 eV. Both values for EB CB create the same ideal spike-like barrier to prevent recombination at the interface and support high V oc in a device fabricated with this structure. , The high degree of similarity between both calculated and measured band bending, and subsequent EB VB , is also strong evidence that the measured Cu vacancies at the interfacial surface are not ubiquitous but, as expected, are scattered periodically throughout the film. This would also indicate that the antisites are even less common.…”
Section: Resultssupporting
confidence: 53%
“…Herein, we look to use specific crystal structure features to tune the band structure of the designed p–n junction to create a spike-like interface. ,, Finely tuned 1 μm thick CZTS films were fabricated using electrochemical deposition of Cu, Sn, and Zn films on molybdenum-coated glass substrates and sulfurization, and 50 nm thick CdS layers were prepared via an optimized chemical bath deposition (CBD). Employing a cooperative use of experimental and theoretical measures of both benchtop and SR spectroscopies, the structural features of the CZTS light-absorbing feature need to create a greater band bending and thus contain structural vacancies and features to promote increased p-type character without creating electron trapping defects.…”
Section: Introductionmentioning
confidence: 99%
“…TiO 2 has been exhibited high refractive index, excellent physical and chemical stability, widely utilized in dye-sensitized solar cells, and is suited as a buffer layer in TFSC. Recently, Bencherif et al [11] examined the degradation mechanisms in kesterite solar cells with TiO 2 as a buffer layer. Although the refractive index is one of the most important physical properties of the thin film [12], SCAPS-1D does not take it into account as input.…”
Section: Introductionmentioning
confidence: 99%
“…Parameters used in the simulation[5,[10][11][12][13][14][15][16][17]. × 10 18 2.2 × 10 18 2.2 × 10 18 2.2 × 10 18 2.2 × 10 18 2.2 × 10 18 N v (cm −3 ) 1.8 × 10 19 1.8 × 10 19 1.8 × 10 19 1.8 × 10 19 1.8 ×…”
mentioning
confidence: 99%
“…Specifically, the CZTS/ZnSnO junction exhibited power conversion efficiencies comparable to those of CZTS/CdS junction . Among the other possibly suitable n-type semiconductors, recent theoretical models indicate TiO 2 as one of the best candidates to be coupled with CZTS. TiO 2 has been widely employed in dye-sensitized solar cells (DSSC) and perovskite solar cells because of its transparency, transport properties and low-cost precursors, but very little experimental evidence has been recorded of TiO 2 coupled with CIGS or CZTS in a p–n junction. Calculations of Bencherif and co-workers indicate that a CZTS/TiO 2 junction could lead to a ∼ 5% V oc gain compared to canonical CZTS/CdS, while the simulated optimized solar cell should be able to overcome also the experimental record Fill Factor (FF) values leading to the overall power efficiency of ∼15% . On the other hand, Nisika and co-workers widely studied the properties of the CZTS/amorphous-TiO 2 where a favorable spike-like effect at the p–n junction interface leads to an offset conduction band value of 0.17 eV.…”
mentioning
confidence: 99%