Modeling and Simulation of Multiple Chemical States in Photoresist Materials

Simulation of the Postexposure Bake Process of Chemically Amplified Resists by Reaction–Diffusion Equations

“…Instead, the predevelopment critical dimensions (PDCD) are extracted from the contours of the protection-site concentration. The PDCD is defined to be the length of the continuous interval on the resist/substrate interface with a protection-site concentration of less than 25 × 10 6 /µm 3 . For example, the PDCDs of the LS and CH structures in Figs.…”

“…It appears from the literature that there are three categories of PEB models. First, the diffusionless models ignore the diffusion phenomena and consider only the reaction mechanism [3][4][5][6]. Second, the reaction-diffusion models involve both reaction and diffusion mechanisms [7][8][9][10][11].…”