Modeling and Simulation of Organic Photodetectors for Low Light Intensity Applications

Fully Inkjet‐Printed Organic Photodetectors with High Quantum Yield

“…On the contrary, a strong dependence of T fall on P is found ( T fall ∝ P −1.2 ), which makes the device faster at higher incident power density: when P is 1 mW·cm −2 , T fall is about 90 μ s. This device behavior is in agreement with a traps dominated scenario where capture and emission processes from trapping states are infl uencing photocurrent transients. [ 47,48 ] In fact, because of the interplay between relatively fast volume traps and relatively slow interface traps (located at the interface between PEDOT:PSS and P3HT:PC 61 BM), at high P interface traps are completely fi lled and fast volume traps are dominating, while at low P slow interface traps are partially fi lled and come into play as well.…”

Bilayer Interdiffused Heterojunction Organic Photodiodes Fabricated by Double Transfer Stamping

“…The thermal annealing step is used to enable interdiffusion between the donor and acceptor layers, forming the active layer. [23][24][25] A simple and reliable means to suppress the reverse-biased dark current, therefore, is to have only the acceptor material in contact with the cathode, while only donor material contacts the anode. [21] Although other approaches have been demonstrated to suppress dark current injection such as addition of a hole blocking layer (e.g., ZnO) [21,22] at the anode, or an electron blocking layer (e.g., poly[N,N′-bis(4butylphenyl)-N,N′-bis(phenyl)-benzidine]) at the cathode, [2] the success of these methods are fabrication process dependent since the additional layers can introduce interface states that adversely affect device performance.…”

Breakdown mechanisms and reverse current-voltage characteristics of organic bulk heterojunction solar cells and photodetectors

“…14,22 The low voltage J-V characteristics of organic BHJ solar cells have been extensively studied with the goal of improving device performance. 17,[23][24][25][26] For the majority of organic BHJ photovoltaic devices, the forward J-V characteristics are well understood and good agreement between numerical simulations and experimental results is observed. 25,[27][28][29] However, the reverse J-V characteristics are not well understood.…”

“…Studies of organic photovoltaics and photodetectors, tend to focus primarily on the first three mechanisms listed above. 17,[23][24][25] However, taking into account only these parameters do not provide good fits to the experimental reverse bias curves. To address the observed discrepancies, we have developed a model for the reverse currentvoltage characteristics.…”

“…INTRODUCTION Organic semiconductors have been the subject of numerous studies in recent years as a result of their potential in various electronic device applications, such as light emitting diodes and displays, 1-4 solar cells, [5][6][7][8][9] organic field effect transistors (OFETs), [10][11][12][13] and photodetectors. [14][15][16][17] Fundamentally, all of these devices are p-n junctions with the difference being in their operating voltage, which attests to the benefit of studying their current density-voltage (J-V) characteristics.…”