Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS₂ Transistor

Abstract

In this study, high‐performance few‐layered ReS2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS2 FET having a trade‐off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h‐BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h‐BN dual‐gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time‐dependent current, and low‐frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y‐function method as a function of constant top gate bias.

A High‐Performance In‐Memory Photodetector Realized by Charge Storage in a van der Waals MISFET

“…[39][40][41] Our photodetector displays a near-unity exponent k, which indicates very few trap states in WSe 2 , as a result of the extreme uniformity of the materials, as well as atomically sharp and dangling bond-free interfaces between WSe 2 and h-BN flakes. [42,43] To thoroughly assess the excellent non-volatile memory characteristics, dynamic switching and non-volatile retention test were investigated for our in-memory photodetector. Figure 4a demonstrates a flexibly dynamic switching behavior of Photodetector C with the periodic modulation of read-write-readerase.…”

Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS2 Field‐Effect Transistor with Hexagonal Boron Nitride

“…The significant improvement of both carrier mobility and noise level by introducing h‐BN layer might be attributed to the suppression of traps between the ReS 2 channel and IL because it provides enough physical distance between the IL and the carriers in the channel. [ 12 ]…”

Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

“…LF noise and time-dependent current measurements are nondestructive analysis techniques to diagnose trapping/de-trapping phenomena of carriers efficiently. [8,38,[41][42][43][44] The measurements of LF noise and time-dependent current fluctuations were conducted during a short time (≈1 s) to further demonstrate the phenomena of correlation between the carriers and the interfacial traps near the channel. The current fluctuations (ΔI D ) as The CNF-CMF model can be expressed as: [43,45] S I q kT N fWLC…”

“…Transition-metal dichalcogenide (TMD) materials have attracted significant attention to replacing the silicon channel due to their excellent mechanical, optical, and electrical properties and applicability. [1][2][3][4][5][6][7][8] Field-effect transistors (FETs) using TMD materials as a channel have benefited from ultra-thin channel thickness and extraordinary surface stability, compared to conventional silicon-based FETs. [9][10][11] Among them, molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) are most popular 2D semiconducting materials and have been widely studied for the next-generation electronic applications.…”