1997
DOI: 10.1016/s0038-1101(97)00139-1
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Modeling current-voltage and hysteretic current-voltage characteristics with two resonant tunneling diodes connected in series

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Cited by 7 publications
(3 citation statements)
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“…The new joint I-V characteristic has two peak and two valley voltages (and currents) dependent on the values of f 1 and f 2 . The first peak and the first valley are due to the RTD which area factor is smaller, whereas the second peak and valley are caused by the other RTD [9].…”
Section: Operation Principlementioning
confidence: 96%
“…The new joint I-V characteristic has two peak and two valley voltages (and currents) dependent on the values of f 1 and f 2 . The first peak and the first valley are due to the RTD which area factor is smaller, whereas the second peak and valley are caused by the other RTD [9].…”
Section: Operation Principlementioning
confidence: 96%
“…both NDRs (the load, NDR L , and the driver, NDR D ) are composed of two RTDs each one, and thus, they present a driving point characteristic with two peaks and two valleys [8], [9].…”
Section: Design Of Rtd-based Nmin/nmax Gatesmentioning
confidence: 99%
“…The analysis performed shows that this is not an inherent property to the circuit topology. The difficulty of analytically studying the circuit has been overcome by resorting to simplified (piecewise linear) descriptions for the RTD driving point characteristics [5]. In this paper, we have derived a method to obtain relations between RTD and transistor parameters that ensure a correct behaviour for both a ternary and a quaternary quantizer.…”
Section: Introductionmentioning
confidence: 99%