Modeling gas-phase nucleation in inductively coupled silane-oxygen plasmas

Suh, S. M.; Girshick, Steven L.; Kortshagen, Uwe R.; Zachariah, M. R.

doi:10.1116/1.1531143

Cited by 14 publications

(7 citation statements)

References 33 publications

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“…Domingo et al [92] considered a two-temperature nitrogen plasma jet, benchmarking their calculations against measurements. The SCEBDC method has been applied to the modelling of a range of two-temperature and non-LCE plasma processes, including low-pressure inductively coupled plasmas for semiconductor processing [93][94][95], nucleation in low-pressure silane-oxygen-argon plasmas [96] and atmospheric-pressure inductively coupled plasmas with departures from local chemical equilibrium [97].…”

Section: Modelling Of Diffusion In Thermal Plasmasmentioning

confidence: 99%

Modelling of thermal plasmas for arc welding: the role of the shielding gas properties and of metal vapour

Murphy

Tanaka

Yamamoto

et al. 2009

J. Phys. D: Appl. Phys.

183

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The methods used to model thermal plasmas, including treatments of diffusion in arcs in gas mixtures, are reviewed. The influence of thermophysical properties on the parameters of tungsten–inert-gas (TIG) welding arcs, particularly those that affect the weld pool, is investigated using a two-dimensional model in which the arc, anode and cathode are included self-consistently. The effect of changing each of six thermophysical properties on the characteristics of an argon TIG arc is assessed. The influence of the product of specific heat and mass density is found to be particularly important in determining the arc constriction. By examining the influence of the different properties on the heat flux density, current density and shear stress at the anode, it is concluded that the weld pool depth can be increased by using shielding gases with high specific heat, thermal conductivity and viscosity. The effect of metal vapour on the arc and weld pool properties is assessed. The most important effect of the metal vapour is found to be the increased electrical conductivity at low temperatures, which leads to lower heat flux density and current density at the weld pool, implying a shallower weld pool.

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Section: Modelling Of Diffusion In Thermal Plasmasmentioning

confidence: 99%

Modelling of thermal plasmas for arc welding: the role of the shielding gas properties and of metal vapour

Murphy

Tanaka

Yamamoto

et al. 2009

J. Phys. D: Appl. Phys.

183

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“…The method has been applied to the modelling of a range of two-temperature and non-LCE plasma processes, including low-pressure inductively coupled plasmas for semiconductor processing [215,216] and nucleation in low pressure silane-oxygen-argon plasmas [217].…”

Section: Specific Treatments Of Diffusionmentioning

confidence: 99%

Treatment of non-equilibrium phenomena in thermal plasma flows

Rat¹,

Murphy²,

Aubreton³

et al. 2008

J. Phys. D: Appl. Phys.

131

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Thermal plasma flows provide a uniquely high specific enthalpy source that is well suited to transformation of matter, often via phase changes. As a consequence, numerous thermal-plasma-based processes have been developed to, for example, destroy pollutants, modify surfaces (e.g. cutting and welding), synthesize nanostructures and deposit functionalized nanostructured coatings. In many cases, departures from equilibrium (both thermal and chemical) occur in regions of such plasmas; for example, in electrode erosion phenomena or in the injection of a liquid into a plasma jet. This paper reviews the treatment of non-equilibrium phenomena in thermal plasma flows, in particular the methods of calculation of the composition and transport coefficients of non-equilibrium plasmas, which are required for modelling the above processes. The focus is on two-temperature plasmas, in which electrons and heavy species are at different temperatures. Methods of calculation of the composition of plasmas both in local chemical equilibrium (LCE) and out of LCE are presented. A comparison of the different methods shows large discrepancies, even assuming LCE. Two-temperature transport coefficients obtained from simplified expressions, from the modified Chapman–Enskog method and from the Stefan–Maxwell relations are presented, as well as examples focusing on the influence of plasma composition. Different methods of calculation of the collision integrals required in determining the transport coefficients are also reviewed. Particular attention is paid to diffusion, in particular to the combined diffusion coefficient method, which simplifies treatment of plasmas in LCE. The method of calculation of the reactive thermal conductivity and the influence of excited states on transport coefficients are also addressed in some detail.

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“…Although there are 36 types of gas produced during the deposition of SiO 2 [25], their side effects are negligible in our process. By this way, the SiO 2 is deposited by using produced SiH4 and injected O 2 , according to equation (1).…”

Section: Producing Sio 2 As a Passive Layermentioning

confidence: 99%

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

Pournia

Firoozabadi

Fathipour

et al. 2020

J. Micromech. Microeng.

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Realization of high-aspect-ratio vertical features on silicon substrates is a crucial step in the fabrication process of microelectromechanical systems devices. Therefore deep reactive ion etching (DRIE) plays an important role in the fabrication of those structures. Recently many efforts have been made in order to propose the novel DRIE processes in order to achieve higher aspect ratios; however, they suffer from complexity and high sensitivity to process parameters. Herein, the authors report a high-aspect-ratio vertical etching of silicon by employment of proposed low temperature SiO2 deposition on Si substrate, using of H2 and O2 gases. The process employs multiple sequences of alternating steps of etching by a fluorine donating gas such as SF6 and sidewall passivation by SiO2. Etch rates reach up to 0.8 μm min−1 and values of aspect ratio higher than 100 are readily achievable by this process. Furthermore, this process also allows for controlled fabrication of nano-wall and high-aspect-ratio nano-wall tube as well as three-dimensional silicon structures.

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Modeling gas-phase nucleation in inductively coupled silane-oxygen plasmas

Cited by 14 publications

References 33 publications

Modelling of thermal plasmas for arc welding: the role of the shielding gas properties and of metal vapour

Modelling of thermal plasmas for arc welding: the role of the shielding gas properties and of metal vapour

Treatment of non-equilibrium phenomena in thermal plasma flows

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

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