Modeling heat generation in high power density nanometer scale GaAs/InGaAs/AlGaAs PHEMT

The thermal resistance of a High Electron Mobility Transistor (HEMT) forming part of a Monolithic Microwave Integrated Circuit (MMIC) is non-invasively extracted under real working conditions (electrical and thermal) by infrared thermal imaging. The HEMT thermal resistance considers the device local maximum temperature and dissipated power. An experimental approach to this end is currently not available, as the HEMTs thermal interaction does not allow extracting its individual heat generation. Thanks to thermal field confinement offered by heat source frequency modulation, the power dissipation in each device is inferred, making feasible its individual thermal resistance extraction. As a result, reasonable values of the local thermal resistance of each individual HEMT integrated in the MMIC (i.e., 57.8+3.4 °C/W and 24.8+1.4 °C/W) are obtained in agreement with studies on discrete devices available in the literature.

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“…For the test vehicles, commercially available GaAs p-HEMT-based MMICs (CHA5350-99F, for 17-24 GHz) [32] have been used. Fig.…”

Section: A Test Vehicles Descriptionmentioning

confidence: 99%

Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits

Vellvehı́

Perpiñà

León

et al. 2021

IEEE Trans. Ind. Electron.

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“…This stochastic Monte-Carlo method with different procedures has been used to predict the thermal conductivity of silicon nano-wires [25,26], model the phonon transport in porous silicon [27,28], and other transistor candidate compounds [29], and simulate the heat generation process in silicon MOSFETs [30,31,32,33]. Besides, in contrast to the use of the Monte-Carlo method for two-dimensional nano-devices [34,35].…”

Section: Introductionmentioning

confidence: 99%

Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices

Shomali

Pedar

Ghazanfarian

et al. 2017

International Journal of Thermal Sciences

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Due to the importance of the transistors in nano-electronics technology, the accurate study of these nano-devices is an essential field of research. Taking into account the non-Fourier nature of heat transfer with considering the actual three-dimensional structure of the MOSFETs, are the challenges in transistor analysis which have not been studied precisely yet. Using the Monte-Carlo method for solving the Boltzmann equation, two actual threedimensional silicon transistors are accurately simulated. First, the accuracy

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Application of an exact integral transform formulation for temperature estimation in solid-state electronics

Corrêa

Chalhub

2021

J Braz. Soc. Mech. Sci. Eng.

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Modeling heat generation in high power density nanometer scale GaAs/InGaAs/AlGaAs PHEMT

Cited by 11 publications

References 25 publications

Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits

Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits

Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices

Application of an exact integral transform formulation for temperature estimation in solid-state electronics

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