Modeling Inductive Behavior of MOSFET Scattering Parameter $S _{22}$ in the Breakdown Regime

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

“…Therefore, the presented work focuses on IMD analysis in the RF avalanche region where inductive behavior occurs Refs. [12,15] to understand whether the breakdown operation is reliable or not. The nonlinear equivalent circuit model of the MOSFET including the breakdown network shown in Fig.…”

“…Conventionally, direct-current (DC) measurements are employed to extract DC characteristics of the avalanche effects [11]. However, when the impact ionization effect is initiated, inductive impedance at RF can occur in the high field region [12], in addition to increased DC current. Device output characteristics at low gigahertz frequencies below 10 GHz [12,13] can be influenced by this RF impact ionization effect.…”

“…However, when the impact ionization effect is initiated, inductive impedance at RF can occur in the high field region [12], in addition to increased DC current. Device output characteristics at low gigahertz frequencies below 10 GHz [12,13] can be influenced by this RF impact ionization effect. For nonlinear characteristics, the RF breakdown mechanism can be bias-dependent [12,14], resulting in nonlinear distortion.…”

“…Device output characteristics at low gigahertz frequencies below 10 GHz [12,13] can be influenced by this RF impact ionization effect. For nonlinear characteristics, the RF breakdown mechanism can be bias-dependent [12,14], resulting in nonlinear distortion. Because the RF characteristics can be influenced by device geometry, understanding of the geometry impact on IMD characteristics is required to provide device information for CMOS high-linearity circuit designs with scaled-down MOSFETs.…”

“…Our previous research was focused on the MOSFET small-signal modeling in the breakdown region [12,15] and the mixed breakdown characterization for the p-n diode [16][17][18]. Another work investigated bias dependent IMD of MOSFETs in the avalanche region [14].…”