No abstract

In this paper, reduction of intermodulation distortion (IMD) due to inductive behavior for radio frequency (RF) MOSFETs is explored using Volterra series based on a nonlinear model incorporating a physical inductive breakdown network for the first time. The calculated total magnitude of high-order nonlinearities is lower than individual results from a nonlinear transconductance and breakdown inductance. In addition, the analysis result shows that the phase difference between the nonlinear transconductance and the breakdown inductance is almost . Cancellation between resistive nonlinearity and reactive nonlinearity from the inductance due to the avalanche delay is first reported. The input third-order intercept point (IIP ) is improved at biases where the breakdown inductance nonlinearity dominates. Instead, linearity will decrease when the breakdown resistance dominates.