Modeling MESFET's for inter-modulation analysis in RF switches

Virk, R.S.; Maas, S.A.

doi:10.1109/75.329711

Cited by 8 publications

(2 citation statements)

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“…This can be pointed out by considedng that in the low-frequency range above cutoff of dispersive effects, the large-signal device response is almost frequency independent so that the nonlinear dynamic admittances in (1) can be assumed to be almost purely resistive Thus, by taking into account that Yij{VG(t),VD(t),W} -0 for w = 0 according to eqn. (2), in the low-frequency range the drain current response of model (1) .10] that our model is capable of taking into account, through the nonlineariy controlled dynamic conductances g92 and 922 the deviations between static and dynamic drain characteristics due to low-frequency dispersive phenomena. In particular, Fig.2 shows, together with the measured DC drain current characteristics, also the associated dynamic ones predicted, according to eqn.…”

Section: Modelling In Imd Analysismentioning

confidence: 99%

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Accurate prediction of intermodulation distortion in GaAs MESFETs

Filicori

Vannini²,

Santarelli

et al. 1995

25th European Microwave Conference, 1995

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A previously proposed look-up-table based mathematical approach forthe modeling of micowave active devices, the Nonlinear Integral Model, is applied for the prediction of intermnodulation distortion (IMD) in GaAs MESFETs. Theoretical considerations and experimental results show that the intermodulationcharacteristics of GaAs MESFETs can be predicted with excellent accuracy by using the proposed model together with suitable electron-deviceoriented interpolation techniques, directly on the bases of conventional measuremerts (DC characteristics and biastfrequency dependent small-signal S-parameters).

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Section: Modelling In Imd Analysismentioning

confidence: 99%

“…VD(t)n} =.Y{=vG(t),vD(t).w^} -2DC{VG(t). UD(t)} (2) where =i iG iDIT, Vn= VG. (1) and (2) The nonlinear dynamic admittances give a purely dynamic contribution to the currents iG.…”

Section: Introductionmentioning

confidence: 99%